DMN3020LK3-13 Diodes Zetex, DMN3020LK3-13 Datasheet - Page 5

• Manufacturer Part Number: DMN3020LK3-13
• Description: MOSFET N-CH 30V 11.3A DPAK
• Manufacturer: Diodes Zetex

Specifications of DMN3020LK3-13

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 6.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 608pF @ 15V
• Power - Max: 2.17W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMN3020LK3-13DITR

Typical Characteristics
DMN3020LK3
Document Revision: 2
1000
0.01
Typical Transfer Characteristics
0.01
100
0.1
0.1
0.1
On-Resistance v Drain Current
10
10
10
0.01
1
1
1
V
0.1
DS
V
V
T = 150°C
= 10V
2.5V
DS
GS
Output Characteristics
2
0.1
Drain-Source Voltage (V)
Gate-Source Voltage (V)
I
10V
D
Drain Current (A)
5V
T = 25°C
1
1
3V
T = 25°C
3
T = 25°C
3.5V
4V
10
3.5V
4V
10
4.5V
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10V
2.5V
V
3V
V
GS
GS
4
5 of 8
Normalised Curves v Temperature
Source-Drain Diode Forward Voltage
1E-3
0.01
0.01
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
10
10
1
1
-50
0.2
T = 150°C
0.1
V
V
Tj Junction Temperature (°C)
DS
SD
Output Characteristics
T = 150°C
0.4
0
Drain-Source Voltage (V)
Source-Drain Voltage (V)
Diodes Incorporated
10V
V
I
A Product Line of
D
GS
V
I
= 7A
D
GS
= 10V
= 250uA
1
0.6
50
= V
4V
DS
3.5V
100
0.8
T = 25°C
Vgs = -3V
10
3V
R
V
2.5V
DS(on)
GS(th)
2V
DMN3020LK3
1.5V
V
GS
150
1.0
© Diodes Incorporated
July 2009