DMN2027LK3-13 Diodes Zetex, DMN2027LK3-13 Datasheet - Page 4

• Manufacturer Part Number: DMN2027LK3-13
• Description: MOSFET N-CH 20V 11.6A DPAK
• Manufacturer: Diodes Zetex

Specifications of DMN2027LK3-13

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 11.6A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 9.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 857pF @ 10V
• Power - Max: 2.14W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMN2027LK3-13DITR

Electrical Characteristics
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 7)
Forward Transconductance (Notes 7 & 8)
Diode Forward Voltage (Note 7)
Reverse recovery time (Note 8)
Reverse recovery charge (Note 8)
DYNAMIC CHARACTERISTICS (
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
Notes:
DMN2027LK3
Document Revision: 1
7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.
Characteristic
Note 8
@T
)
A
= 25°C unless otherwise specified
Symbol
R
BV
V
DS (ON)
t
t
I
I
C
V
C
C
GS(th)
Q
Q
D(on)
D(off)
DSS
GSS
Q
Q
Q
g
t
oss
t
t
SD
rss
DSS
rr
iss
fs
gs
gd
r
f
rr
g
g
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Min
4 of 8
0.6
20
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31.7
0.89
22.3
18.7
12.6
Typ
121
583
857
177
102
5.2
9.1
1.9
3.2
5.4
⎯
⎯
⎯
⎯
⎯
0.021
0.027
0.040
±100
Max
0.5
2.0
1.0
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Diodes Incorporated
A Product Line of
Unit
μA
nA
nC
nC
nC
nC
nC
ns
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
V
I
V
V
I
V
V
V
V
I
I
V
f= 1MHz
V
V
I
V
I
D
D
S
S
D
D
DS
GS
GS
GS
GS
DS
DS
GS
GS
= 10A
DD
= 250μA, V
= 10A, V
= 10A, di/dt= 100A/μs
= 10A, R
= 250μA, V
= 4.5V
= 20V, V
= 15V, I
= 10V, V
= 10V, V
= ±12V, V
= 10V, I
= 4.5V, I
= 2.5V, I
= 2.5V, I
Test Condition
GS
G
DMN2027LK3
D
D
D
D
D
≅ 6.0Ω
GS
GS
GS
= 20A
= 10A
= 0V
DS
= 4A
GS
= 10A
= 4A
DS
= 0V
= 0V
= 10V
= V
= 0V
= 0V
© Diodes Incorporated
GS
V
DS
= 10V
July 2009