ZXMN6A07FTA Diodes Zetex, ZXMN6A07FTA Datasheet - Page 4

• Manufacturer Part Number: ZXMN6A07FTA
• Description: MOSFET N-CH 60V 1.2A SOT23-3
• Manufacturer: Diodes Zetex
• Type: Small Signalr

Specifications of ZXMN6A07FTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 166pF @ 40V
• Power - Max: 625mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.45Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 1.2A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Power Dissipation: 806mW
• Continuous Drain Current: 1.2A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant
• Other names: ZXMN6A07FTR

Electrical characteristics (at T
(*) Measured under pulsed conditions. Pulse width
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 6 - January 2007
© Zetex Semiconductors plc 2007
NOTES:
Parameter
Static
Drain-source breakdown
voltage
Zero gate voltage drain current I
Gate-body leakage
Gate-source threshold voltage V
Static drain-source on-state
resistance
Forward transconductance
Dynamic
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(‡)
(*)
(†) (‡)
(*)
(‡)
(‡)
(*)(‡)
Symbol
V
I
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
amb
= 25°C unless otherwise stated)
300 s; duty cycle
Min.
1.0
60
4
Typ.
19.5
1.65
0.67
0.82
0.80
20.5
21.3
166
2.3
8.7
1.8
1.4
4.9
2.0
3.2
0.250
0.350
Max.
2%.
0.95
100
3.0
1
Unit Conditions
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
I
V
V
I
V
V
V
V
f=1MHz
V
I
R
V
I
V
I
T
V
T
di/dt=100A/ s
D
D
D
D
D
ZXMN6A07F
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
DS
GS
= 250 A, V
= 250 A, V
= 1.8A
= 1.8A
= 1.8A
=25°C, I
=25°C, I
≈
= 60V, V
= 15V, I
= 40V, V
= 30V, V
= 30V, V
=±20V, V
= 10V, I
= 4.5V, I
= 30V, V
=0V
6.0
www.zetex.com
S
F
= 1.8A,
= 0.45A,
D
D
D
GS
GS
GS
GS
GS
= 1.8A
= 1.8A
DS
GS
DS
= 1.3A
=0V
=0V
= 5V
= 10V
= 10V
=0V
=V
=0V
GS