SI1021R-T1-E3 Vishay, SI1021R-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1021R-T1-E3
• Description: MOSFET P-CH 60V 190MA SC-75A
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1021R-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 190mA
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 1.7nC @ 15V
• Input Capacitance (ciss) @ Vds: 23pF @ 25V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 8 Ohms
• Forward Transconductance Gfs (max / Min): 80 mS
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 190 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -190mA
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 5ohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1021R-T1-E3TR

Si1021R
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
4
1000
- 0.0
- 0.1
- 0.2
- 0.3
100
0.5
0.4
0.3
0.2
0.1
10
1
0.01
0.00
- 50
0.1
Threshold Voltage Variance Over Temperature
2
1
www.vishay.com/ppg?71410.
10
V
- 25
-4
Source-Drain Diode Forward Voltage
GS
T
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
J
= 0 V
0.3
= 125 °C
V
SD
T
0
I
J
D
- Junction Temperature (°C)
- Source-to-Drain Voltage (V)
= 250 µA
25
0.6
10
Single Pulse
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
T
0.9
J
75
T
= - 55 °C
J
= 25 °C
A
100
= 25 °C, unless otherwise noted)
10
1.2
-2
125
1.5
150
Square Wave Pulse Duration (s)
10
-1
2.5
1.5
0.5
10
8
6
4
2
0
3
2
1
0
0.01
1
0
On-Resistance vs. Gate-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.1
2
V
GS
I
D
- Gate-to-Source Voltage (V)
= 200 mA
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
DM
4
1
JM
- T
Time (s)
t
A
1
S10-2687-Rev. F, 22-Nov-10
T
= P
A
t
2
Document Number: 71410
= 25 °C
DM
6
Z
10
thJA
thJA
100
I
t
t
1
2
D
(t)
= 500 mA
= 500 °C/W
8
100
6
0
0
600
10