SI1307EDL-T1-E3 Vishay, SI1307EDL-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1307EDL-T1-E3
• Description: MOSFET P-CH 12V 850MA SOT323-3
• Manufacturer: Vishay

Specifications of SI1307EDL-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 290 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 850mA
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 4.5V
• Power - Max: 290mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.29 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.85 A
• Power Dissipation: 290 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 910mA
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 580mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -45V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1307EDL-T1-E3TR

Document Number: 71096
Pending—Rev. A, 10-Nov-99
0.001
0.01
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
10
V
0
8
6
4
2
0
1
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V
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Q
GS
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– Source-to-Drain Voltage (V)
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– Total Gate Charge (nC)
– Drain Current (A)
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3
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4
3
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J
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5
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300
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100
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D
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GS
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– Junction Temperature ( C)
www.siliconix.com FaxBack 408-970-5600
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– Gate-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
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