SI1307EDL-T1-E3 Vishay, SI1307EDL-T1-E3 Datasheet - Page 3
![MOSFET P-CH 12V 850MA SOT323-3](/photos/5/45/54567/pkg_5549_sml.jpg)
SI1307EDL-T1-E3
Manufacturer Part Number
SI1307EDL-T1-E3
Description
MOSFET P-CH 12V 850MA SOT323-3
Manufacturer
Vishay
Datasheet
1.SI1307EDL-T1-E3.pdf
(6 pages)
Specifications of SI1307EDL-T1-E3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
290 mOhm @ 1A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
850mA
Vgs(th) (max) @ Id
450mV @ 250µA
Gate Charge (qg) @ Vgs
5nC @ 4.5V
Power - Max
290mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.29 Ohm @ 4.5 V
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.85 A
Power Dissipation
290 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
910mA
Drain Source Voltage Vds
-12V
On Resistance Rds(on)
580mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
-45V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1307EDL-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI1307EDL-T1-E3
Manufacturer:
TI
Quantity:
117
Part Number:
SI1307EDL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 71096
Pending—Rev. A, 10-Nov-99
0.001
0.01
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
10
V
0
8
6
4
2
0
1
GS
0
0
0
= 1.8 V
V
I
D
DS
= 1 A
1
0.2
= 6 V
1
V
V
SD
Q
GS
T
g
2
J
– Source-to-Drain Voltage (V)
= 2.5 V
I
= 150 C
0.4
D
– Total Gate Charge (nC)
– Drain Current (A)
2
3
0.6
4
3
T
J
0.8
= 25 C
V
GS
5
= 4.5 V
4
1.0
6
1.2
7
5
New Product
400
300
200
100
1.6
1.2
0.8
0.4
1.6
1.2
0.8
0.4
0
0
0
–50
0
0
V
0.5
I
D
–25
GS
= 1 A
= 4.5 V
1.0
C
T
V
V
rss
3
0
J
GS
DS
– Junction Temperature ( C)
www.siliconix.com FaxBack 408-970-5600
1.5
C
– Gate-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
iss
C
25
oss
2.0
I
D
Vishay Siliconix
50
= 1 A
6
2.5
Si1307EDL
75
3.0
100
9
3.5
125
4.0
150
4.5
12
3