ZXMN2F34FHTA Diodes Zetex, ZXMN2F34FHTA Datasheet - Page 2

• Manufacturer Part Number: ZXMN2F34FHTA
• Description: MOSFET N-CHAN 20V SOT23-3
• Manufacturer: Diodes Zetex

Specifications of ZXMN2F34FHTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 2.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 2.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 277pF @ 10V
• Power - Max: 950mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN2F34FHTR

Absolute maximum ratings
Thermal resistance
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
(b) For a device surface mounted on FR4 PCB measured at t≤ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300μs - pulse width limited by maximum junction
(d) Thermal resistance from junction to solder-point (at end of drain lead).
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
Parameter
Drain source voltage
Gate source voltage
Continous Drain Current @ V
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Operating and storage temperature range
Parameter
Junction to ambient
Junction to ambient
Junction to lead
conditions.
temperature.
(d)
(a)
(b)
(c)
A
A
=25°C
=25°C
@ V
@ V
GS
GS
GS
(a)
(b)
=4.5; T
=4.5; T
=4.5; T
(c)
A
A
A
=70°C
=25°C
=25°C
(b)
(b)
(a)
(b)
2
Symbol
Symbol
T
V
R
R
R
j
V
I
I
, T
P
P
DM
SM
DSS
I
I
GS
D
S
D
D
JA
JA
JL
stg
ZXMN2F34FH
-55 to 150
Limit
Limit
18.6
18.6
0.95
±12
131
4.0
3.3
3.4
2.1
7.6
1.4
20
11
89
68
www.zetex.com
mW/°C
mW/°C
°C/W
°C/W
°C/W
Unit
Unit
°C
W
W
A
A
A
A
A
A
V
V