2N7002-7-F Diodes Inc, 2N7002-7-F Datasheet - Page 3

• Manufacturer Part Number: 2N7002-7-F
• Description: MOSFET N-CH 60V 115MA SOT23-3
• Manufacturer: Diodes Inc

Specifications of 2N7002-7-F

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 115mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.5 Ohm @ 5 V
• Forward Transconductance Gfs (max / Min): 0.08 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.115 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 800mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 13.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Dc: 1034
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2N7002-FDITR

2N7002
Document number: DS11303 Rev. 24 - 2
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Fig. 3 On-Resistance vs. Junction Temperature
Fig. 5 Typical Transfer Characteristics
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Fig. 1 On-Region Characteristics
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Fig. 6 Max Power Dissipation vs. Ambient Temperature
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Fig. 4 On-Resistance vs. Gate-Source Voltage
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Fig. 2 On-Resistance vs. Drain Current
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© Diodes Incorporated
November 2010
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