NTJD4105CT4G ON Semiconductor, NTJD4105CT4G Datasheet - Page 3

• Manufacturer Part Number: NTJD4105CT4G
• Description: MOSFET N/P-CHAN COMPL SOT-363
• Manufacturer: ON Semiconductor

Specifications of NTJD4105CT4G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
• Drain To Source Voltage (vdss): 20V, 8V
• Current - Continuous Drain (id) @ 25° C: 630mA, 775mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 46pF @ 20V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.4
1.2
0.8
0.6
0.4
0.2
0
1
0
0
0
1.8
1.6
1.4
1.2
0.8
0.6
Figure 3. On−Resistance vs. Drain Current and
−50
2
1
V
GS
V
I
V
and 2.5 V
= 4.5 V
0.2
DS
D
Figure 1. On−Region Characteristics
GS
= 0.63 A
−25
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
V
= 4.5 V
2
V
TYPICAL N−CHANNEL PERFORMANCE CURVES
GS
GS
I
D,
0.4
T
= 2 V
J
= 4.5 V to 2.2 V
DRAIN CURRENT (AMPS)
, JUNCTION TEMPERATURE (°C)
0
Temperature
4
0.6
25
T
T
T
J
J
J
Temperature
= 125°C
= 25°C
= −55°C
50
0.8
6
1.8 V
1.2 V
1.6 V
1.4 V
75
1
T
100
J
8
= 25°C
1.2
http://onsemi.com
125
1.4
10
150
3
1.2
0.8
0.6
0.4
0.2
0.7
0.6
0.5
0.4
0.3
0.2
0.1
80
60
40
20
1
0
0
0
0
0
0
Figure 4. On−Resistance vs. Drain Current and
V
V
DS
GS
V
(T
≥ 10 V
= 2.5 V
0.2
0.4
GS
J
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
= 25°C unless otherwise noted)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
I
5
D,
0.4
DRAIN CURRENT (AMPS)
0.8
Temperature
25°C
T
T
T
T
0.6
J
J
J
J
= 125°C
= 125°C
= 25°C
= −55°C
1.2
10
0.8
C
C
C
T
iss
oss
rss
J
1.6
= −55°C
1
15
T
V
J
GS
2
1.2
= 25°C
= 0 V
20
2.4
1.4