NTJD4105CT4 ON Semiconductor, NTJD4105CT4 Datasheet - Page 4

• Manufacturer Part Number: NTJD4105CT4
• Description: MOSFET N/P-CHAN COMPL SOT-363
• Manufacturer: ON Semiconductor

Specifications of NTJD4105CT4

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
• Drain To Source Voltage (vdss): 20V, 8V
• Current - Continuous Drain (id) @ 25° C: 630mA, 775mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 46pF @ 20V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

5
4
3
2
1
0
0
Q
GS
Drain−to−Source Voltage vs. Total Charge
0.2
TYPICAL N−CHANNEL PERFORMANCE CURVES
Q
Figure 7. Gate−to−Source and
Q
g
0.4
, TOTAL GATE CHARGE (nC)
GD
Q
0.6
G(TOT)
0.8
V
GS
1
I
T
D
J
= 0.63 A
= 25°C
1.2
http://onsemi.com
1.4
4
0.7
0.6
0.5
0.3
0.2
0.1
0.4
0
Figure 8. Diode Forward Voltage vs. Current
0
V
GS
V
SD
(T
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
J
0.2
= 25°C unless otherwise noted)
T
J
0.4
= 150°C
0.6
T
J
= 25°C
0.8
1