NTJD2152PT4G ON Semiconductor, NTJD2152PT4G Datasheet - Page 3

• Manufacturer Part Number: NTJD2152PT4G
• Description: MOSFET P-CH 8V DUAL ESD SOT-363
• Manufacturer: ON Semiconductor

Specifications of NTJD2152PT4G

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 775mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 225pF @ 8V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.5
0.4
0.3
0.2
0.1
1.4
1.2
0.8
0.6
0.4
0.2
0
1
0
0
0
1.6
1.4
1.2
0.8
0.6
Figure 3. On−Resistance vs. Drain Current and
−50
1
V
GS
−V
I
V
and −2.5 V
= −4.5 V
0.2
D
Figure 1. On−Region Characteristics
DS
GS
−25
= −0.7 A
−2 V
Figure 5. On−Resistance Variation with
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= −4.5 V
V
V
−I
GS
GS
2
0.4
T
D,
J
= −4.5 V to −2.6 V
= −2.2 V
, JUNCTION TEMPERATURE (°C)
DRAIN CURRENT (AMPS)
0
Temperature
TYPICAL PERFORMANCE CURVES
0.6
25
T
T
T
J
J
J
Temperature
= 125°C
= 25°C
= −55°C
4
50
0.8
75
1
6
100
T
1.2
J
= 25°C
−1.8 V
−1.4 V
−1.2 V
−1.6 V
http://onsemi.com
125
1.4
8
150
3
300
240
180
120
1.4
1.2
0.8
0.6
0.4
0.2
0.5
0.4
0.3
0.2
0.1
60
(T
1
0
0
0
−8
0
J
0
Figure 4. On−Resistance vs. Drain Current and
V
= 25°C unless otherwise noted)
V
DS
GS
≥ −10 V
−V
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
= −2.5 V
0.2
0.4
GS
Figure 2. Transfer Characteristics
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
−I
−6
0.4
D,
DRAIN CURRENT (AMPS)
0.8
VOLTAGE (VOLTS)
Temperature
25°C
T
T
T
T
0.6
J
J
J
J
= 125°C
= 125°C
= 25°C
= −55°C
1.2
−4
0.8
T
J
1.6
= −55°C
1
C
−2
iss
T
V
J
C
GS
2
1.2
= 25°C
oss
C
rss
= 0 V
2.4
1.4
0