NTHD4401PT3 ON Semiconductor, NTHD4401PT3 Datasheet - Page 4

• Manufacturer Part Number: NTHD4401PT3
• Description: MOSFET P-CHAN DUAL 20V CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD4401PT3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.1A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 300pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

10000
1000
6
5
4
3
2
1
0
100
10
0
−V
2
Q1
DS
Drain−to−Source Voltage vs. Total Charge
V
GS
Figure 7. Drain−to−Source Leakage Current
0.5
−V
4
= 0 V
DS
Figure 9. Gate−to−Source and
Q
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
g
, TOTAL GATE CHARGE (nC)
6
1
Q2
TYPICAL PERFORMANCE CURVES
8
1.5
QT
vs. Voltage
T
T
J
J
10
= 150°C
= 100°C
2
12
2.5
1.5
0.5
2
1
0
2.5
0.3
14
Figure 11. Diode Forward Voltage vs. Current
−V
I
T
D
V
T
−V
J
J
GS
16
= −2.1 A
GS
= 25°C
= 25°C
SD
3
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
http://onsemi.com
18
NTHD4401P
3.5
0.5
12
10
8
6
4
2
0
20
4
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
600
500
400
300
200
100
(T
100
0
10
10
J
1
= 25°C unless otherwise noted)
C
C
0.7
1
iss
rss
Figure 10. Resistive Switching Time Variation
V
t
t
d(on)
d(off)
5
DS
t
Figure 8. Capacitance Variation
t
f
r
= 0 V
−V
R
G
GS
, GATE RESISTANCE (OHMS)
0.9
0
vs. Gate Resistance
−V
V
GS
DS
= 0 V
5
10
10
V
I
V
D
T
DD
GS
C
J
= −2.1 A
15
oss
= 25°C
= −16 V
= −4.5 V
20
100