MMDF1N05ER2G ON Semiconductor, MMDF1N05ER2G Datasheet - Page 5

• Manufacturer Part Number: MMDF1N05ER2G
• Description: MOSFET N-CHAN DUAL 2A 50V 8SOIC
• Manufacturer: ON Semiconductor

Specifications of MMDF1N05ER2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Module Configuration: Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2A
• Drain Source Voltage Vds: 50V
• On Resistance Rds(on): 300mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMDF1N05ER2GOS

PUBLICATION ORDERING INFORMATION
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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−Z−
−Y−
B
H
−X−
8
1
0.25 (0.010)
G
A
D
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
4
5
M
Z
S
Y
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
S
C
0.25 (0.010)
X
SEATING
PLANE
S
0.024
0.10 (0.004)
0.6
0.275
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
M
7.0
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
Y
http://onsemi.com
M
N
MMDF1N05E
CASE 751−07
X 45
ISSUE AG
SOIC−8
_
M
5
K
0.060
0.155
1.52
4.0
1.270
0.050
J
SCALE 6:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
5. DIMENSION D DOES NOT INCLUDE DAMBAR
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
ANSI Y14.5M, 1982.
MOLD PROTRUSION.
PER SIDE.
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
STANDARD IS 751−07.
STYLE 11:
DIM
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
A
B
C
D
G
H
K
M
N
J
S
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
inches
MILLIMETERS
MIN
4.80
3.80
1.35
0.33
0.10
0.19
0.40
0.25
5.80
mm
0
1.27 BSC
_
MAX
5.00
4.00
1.75
0.51
0.25
0.25
1.27
0.50
6.20
8
_
0.189
0.150
0.053
0.013
0.004
0.007
0.016
0.010
0.228
MIN
MMDF1N05E/D
0.050 BSC
0
INCHES
_
0.197
0.157
0.069
0.020
0.010
0.010
0.050
0.020
0.244
MAX
8
_