NTZD3155CT1G ON Semiconductor, NTZD3155CT1G Datasheet - Page 3

• Manufacturer Part Number: NTZD3155CT1G
• Description: MOSFET N/P-CH 20V 430MA SOT-563
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of NTZD3155CT1G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 540mA, 430mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 2.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 150pF @ 16V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.55 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.54 A @ N Channel or 0.43 A @ P Channel
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±6V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-563
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTZD3155CT1GOSTR

ELECTRICAL CHARACTERISTICS
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (V
Drain-Source Diode Characteristics
4. Switching characteristics are independent of operating junction temperatures
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Of f Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Of f Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Parameter
GS
Symbol
Q
Q
Q
Q
t
t
= V) (Note 4)
t
t
(T
d(OFF)
d(OFF)
G(TOT)
Q
Q
G(TOT)
Q
Q
d(ON)
d(ON)
V
G(TH)
G(TH)
t
RR
t
t
t
t
SD
J
GS
GD
GS
GD
r
r
f
f
= 25°C unless otherwise specified)
N/P
N
P
N
P
N
P
N
P
http://onsemi.com
NTZD3155C
V
V
V
V
V
GS
GS
GS
GS
GS
dIS/dt = 100 A/ms
= -4.5 V, V
= -4.5 V, V
= 4.5 V, V
= 4.5 V, V
= 0 V, T
V
3
GS
= 0 V,
Test Condition
J
DD
R
R
DS
= 25°C
DD
DS
G
G
= -10 V, I
= -10 V; I
= 10 W
= 10 W
= 10 V, I
= 10 V; I
D
D
I
I
D
D
I
S
I
S
S
S
= -215 mA,
= -380 mA
= 540 mA,
= 540 mA
= -350 mA
= -350 mA
= 350 mA
= 350 mA
Min
0.35
-0.8
Typ
1.5
0.1
0.2
1.7
0.1
0.3
0.4
6.0
4.0
8.0
0.7
6.5
16
10
12
35
19
13
Max
-1.2
2.5
2.5
1.2
Unit
nC
ns
ns
V