NTHD5905T1 ON Semiconductor, NTHD5905T1 Datasheet - Page 3

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NTHD5905T1

Manufacturer Part Number
NTHD5905T1
Description
MOSFET 2P-CH 8V 3A CHIPFET
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTHD5905T1

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 3A, 4.5V
Drain To Source Voltage (vdss)
8V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
450mV @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 4.5V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-ChipFET™
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
NTHD5905T1OS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTHD5905T1
Manufacturer:
MIC
Quantity:
1 000
0.30
0.25
0.20
0.15
0.10
0.05
10
5
0
4
3
2
1
0
8
6
4
2
0
0
0
0
V
thru 3 V
V
Figure 3. On−Resistance vs. Drain Current
GS
GS
= 5
= 1.8 V
0.5
1
Figure 1. Output Characteristics
2
−V
DS
Figure 5. Gate Charge
Q
, Drain−to−Source Voltage (V)
g,
−I
1.0
2
Total Gate Charge (nC)
D
, Drain Current (A)
4
1.5
3
V
GS
TYPICAL ELECTRICAL CHARACTERISTICS
= 2.5 V
6
2.0
4
4
V
2.5 V
1.5 V
GS
2 V
1 V
= 4.5 V
8
2.5
5
http://onsemi.com
3.0
10
6
3
1000
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
10
0
8
6
4
2
0
−50
0
0
V
−25
C
GS
I
D
rss
0.5
= 4.5 V
= 3 A
Figure 2. Transfer Characteristics
4
−V
−V
Figure 6. On−Resistance vs.
T
0
DS
GS
J
Figure 4. Capacitance
, Junction Temperature (°C)
Junction Temperature
C
, Drain−to−Source Voltage (V)
, Gate−to−Source Voltage (V)
1.0
iss
C
oss
25
8
1.5
50
T
C
25°C
12
= −55°C
75
2.0
100
16
125°C
2.5
125
3.0
150
20

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