TPCF8303(TE85L) Toshiba, TPCF8303(TE85L) Datasheet - Page 3

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TPCF8303(TE85L)

Manufacturer Part Number
TPCF8303(TE85L)
Description
MOSFET PCH 20V 3A VS-8
Manufacturer
Toshiba
Datasheet

Specifications of TPCF8303(TE85L)

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
58 mOhm @ 1.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
1.2V @ 200µA
Gate Charge (qg) @ Vgs
11nC @ 5V
Input Capacitance (ciss) @ Vds
860pF @ 10V
Power - Max
530mW
Mounting Type
Surface Mount
Package / Case
VS-8 (2-3U1B)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
TPCF8303TR
Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge1
Gate-drain (“miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
Pulse (Note 1)
(Ta = 25°C)
V
V
R
R
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
DS (ON)
DS (ON)
V
Q
I
I
C
I
|Y
C
C
Q
GSS
DRP
DSS
V
t
t
Q
DSF
oss
on
off
gs1
rss
t
t
iss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
V
Duty < = 1%, t
V
I
I
D
D
D
DR
V
GS
DS
DS
GS
GS
GS
DS
DS
DD
= −10 mA, V
= −10 mA, V
= −3 A
GS
3
(Ta = 25°C)
= −3.0 A, V
= −20 V, V
= −10 V, I
= −10 V, I
= −10 V, V
= ±8V, V
= −1.8 V, I
= −2.5 V, I
= −4.5 V, I
∼ − −16 V, V
−5 V
0 V
Test Condition
Test Condition
w
DS
D
D
= 10 µs
D
GS
GS
D
D
GS
GS
GS
GS
= −200 µA
= −1.5 A
= 0 V
= −1.5 A
= −1.5 A
= −1.5 A
= 0 V
= 10 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= −5 V,
V
I
D
DD
= −1.5 A
∼ − −10 V
V
OUT
−0.45
Min
Min
−20
−10
3.0
Typ.
Typ.
120
860
110
140
6.0
5.6
0.9
2.7
63
43
16
16
55
11
TPCF8303
2006-11-16
Max
−1.2
Max
−12
±10
−10
250
1.2
87
58
Unit
Unit
mΩ
µA
µA
pF
nC
ns
V
V
S
A
V

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