TPCF8302(TE85L) Toshiba, TPCF8302(TE85L) Datasheet

TPCF8302(TE85L)

Manufacturer Part Number

TPCF8302(TE85L)

Description

MOSFET PCH 20V 3A VS-8

Manufacturer

Toshiba

Datasheet

1.TPCF8302TE85LF.pdf (7 pages)

Specifications of TPCF8302(TE85L)

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

59 mOhm @ 1.5A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

1.2V @ 200µA

Gate Charge (qg) @ Vgs

11nC @ 5V

Input Capacitance (ciss) @ Vds

800pF @ 10V

Power - Max

530mW

Mounting Type

Surface Mount

Package / Case

VS-8 (2-3U1B)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

TPCF8302TR

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Notebook PC Applications

Portable Equipment Applications

•

Absolute Maximum Ratings

Low drain-source ON resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power

dissipation

(t = 5 s) (Note 2a) Single-device value at

Drain power

dissipation

(t = 5 s) (Note 2b) Single-device value at

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Single-device value at dual operation

Channel temperature

Storage temperature range

Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6): See the next page.

This transistor is an electrostatic-sensitive device. Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

Characteristics

Pulse

Single-device operation

dual operation (Note 3b)

Single-device operation

dual operation (Note 3b)

= 20 kΩ)

DSS

(Note 2a, 3b, 5)

= −0.5 to −1.2 V

= −10 µA (max) (V

= −10 V, I

(Note 3a)

(Note 1)

(Note 4)

DS (ON)

(Ta = 25°C)

TPCF8302

| = 6.2 S (typ.)

= −200 µA)

Symbol

= 44 mΩ (typ.)

DGR

D (1)

D (2)

D (1)

D (2)

DSS

GSS

stg

= −20 V)

−55~150

Rating

−3.0

1.35

1.12

0.53

0.33

0.58

−1.5

0.11

−20

±10

−12

150

Unit

°C

Weight: 0.011 g (typ.)

Circuit Configuration

JEDEC

JEITA

TOSHIBA

2-3U1B

TPCF8302

2006-11-16

―

Unit: mm

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TPCF8302(TE85L) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

Thermal Characteristics Characteristics Single-device operation Thermal resistance, (Note 3a) channel to ambient ( (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient ( (Note 2b) ...

Page 3

Electrical Characteristics Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off ...

Page 4

I – -2.5 -1.8 -10 -2.0 -6 -3.0 -4 Common source Ta = 25°C -3 Pulse Test -1 -1 -0.2 -0.4 -0.6 -0.8 Drain-source voltage V DS (V) I ...

Page 5

R – (ON) 160 Common Source -3A Pulse Test 120 -2.0V -1.5A,-0.75A -2. -3A,-1.5A,-0.75A -4. -3A,-1.5A,-0.75A 0 −80 ...

Page 6

Single pulse 100 10 1 0.01 0.1 0.001 Safe Operating Area 100 I D max (pulse) * 100 µ ※ Single pulse Ta=25℃ Curves must be derated linearly with V DSS max increase ...

Page 7

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...

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