IRF7750GTRPBF International Rectifier, IRF7750GTRPBF Datasheet - Page 8
IRF7750GTRPBF
Manufacturer Part Number
IRF7750GTRPBF
Description
MOSFET P-CH DUAL 20V 4.7A 8TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7750GTRPBF.pdf
(8 pages)
Specifications of IRF7750GTRPBF
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 4.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.7A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
39nC @ 5V
Input Capacitance (ciss) @ Vds
1700pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Configuration
Dual
Transistor Polarity
Dual P-Channel
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 4.7 A
Power Dissipation
1 W
Mounting Style
SMD/SMT
Gate Charge Qg
26 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
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Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 05/2009
8
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