IRF7756 International Rectifier, IRF7756 Datasheet - Page 4

• Manufacturer Part Number: IRF7756
• Description: MOSFET 2P-CH 12V 4.3A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7756

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1400pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7756

IRF7756
2400
2000
1600
1200
4
100
800
400
0.1
10
1
0
0.2
Fig 7. Typical Source-Drain Diode
1
Fig 5. Typical Capacitance Vs.
-V
SD
-V DS , Drain-to-Source Voltage (V)
Drain-to-Source Voltage
0.4
,Source-to-Drain Voltage (V)
T = 150 C
Forward Voltage
J
Coss
Crss
Ciss
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
°
0.6
10
T = 25 C
J
f = 1 MHZ
°
0.8
V
GS
SHORTED
= 0 V
1.0
100
100
0.1
10
Fig 8. Maximum Safe Operating Area
10
1
8
6
4
2
0
0.1
0
I =
D
T A = 25°C
Tj = 150°C
Single Pulse
Fig 6. Typical Gate Charge Vs.
-4.3A
-V DS , Drain-toSource Voltage (V)
Gate-to-Source Voltage
Q , Total Gate Charge (nC)
5
G
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
10
V
V
DS
DS
=-9.6V
=-6V
15
10
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100µsec
1msec
10msec
20
100
25