IRF5852 International Rectifier, IRF5852 Datasheet - Page 4
![MOSFET 2N-CH 20V 2.7A 6-TSOP](/photos/5/45/54542/21-tsop-6_sml.jpg)
IRF5852
Manufacturer Part Number
IRF5852
Description
MOSFET 2N-CH 20V 2.7A 6-TSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF5852.pdf
(9 pages)
Specifications of IRF5852
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 2.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
1.25V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Input Capacitance (ciss) @ Vds
400pF @ 15V
Power - Max
960mW
Mounting Type
Surface Mount
Package / Case
Micro6™(TSOP-6)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF5852TRPBF
Manufacturer:
IR
Quantity:
17 800
Part Number:
IRF5852TRPBF
Manufacturer:
IR
Quantity:
20 000
IRF5852
100
4
0.1
10
600
500
400
300
200
100
1
0.4
0
Fig 7. Typical Source-Drain Diode
1
Fig 5. Typical Capacitance Vs.
V
T = 150 C
SD
0.6
V
J
Drain-to-Source Voltage
DS
,Source-to-Drain Voltage (V)
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
°
C iss
C oss
C rss
0.8
=
=
=
=
T = 25 C
0V,
C
C
C
J
gs
gd
ds
+ C
+ C
10
°
1.0
f = 1MHz
gd ,
gd
C
ds
V
1.2
GS
SHORTED
= 0 V
1.4
100
100
0.1
10
1
Fig 8. Maximum Safe Operating Area
10
0.1
8
6
4
2
0
T
T
Single Pulse
0
A
J
I =
D
Fig 6. Typical Gate Charge Vs.
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
V
2.7A
DS
°
Gate-to-Source Voltage
°
Q , Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
G
2
1
BY R
V
V
DS
DS
DS(on)
4
= 16V
= 10V
10
www.irf.com
6
100us
1ms
10ms
100
8