IRF5850 International Rectifier, IRF5850 Datasheet - Page 6

• Manufacturer Part Number: IRF5850
• Description: MOSFET 2P-CH 20V 2.2A 6TSOP
• Manufacturer: International Rectifier

Specifications of IRF5850

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 135 mOhm @ 2.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 5.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 320pF @ 15V
• Power - Max: 960mW
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Fig 11. Typical On-Resistance Vs. Gate
6
0.24
0.20
0.16
0.12
0.08
Fig 13a. Basic Gate Charge Waveform
V
2.0
G
Q
-V GS, Gate -to -Source Voltage (V)
GS
3.0
Voltage
Charge
Q
Q
4.0
GD
G
I D = -2.2A
5.0
6.0
7.0
Fig 12. Typical On-Resistance Vs. Drain
0.40
0.30
0.20
0.10
Fig 13b. Gate Charge Test Circuit
12V
0
V
GS
Same Type as D.U.T.
Current Regulator
.2 F
2
-I D , Drain Current (A)
50K
-3mA
Current
Current Sampling Resistors
.3 F
V GS = -4.5V
4
I
G
V GS = -2.5V
D.U.T.
6
I
D
www.irf.com
+
-
V
8
DS
10