SI3481DV-T1-E3 Vishay, SI3481DV-T1-E3 Datasheet

TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,4A I(D),TSOP

SI3481DV-T1-E3

Manufacturer Part Number
SI3481DV-T1-E3
Description
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,4A I(D),TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI3481DV-T1-E3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
48 mOhm @ 5.3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Power - Max
1.14W
Mounting Type
Surface Mount
Package / Case
6-TSOP
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4 A
Power Dissipation
1140 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI3481DV-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3481DV-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
26 490
Part Number:
SI3481DV-T1-E3
Manufacturer:
Freescale
Quantity:
26
Part Number:
SI3481DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72105
S09-2276-Rev. D, 02-Nov-09
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Ordering Information: Si3481DV -T1-E3 (Lead (Pb)-free)
V
DS
- 30
(V)
3 mm
0.079 at V
0.048 at V
Si3481DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
T op V i e w
R
TSOP-6
2.85 mm
DS(on)
J
a
= 150 °C)
a
GS
GS
= - 4.5 V
(Ω)
6
5
4
= - 10 V
P-Channel 30-V (D-S) MOSFET
a
a
A
= 25 °C, unless otherwise noted
I
- 5.3
- 4.1
D
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
• Load Switch
Symbol
Symbol
T
R
R
J
Definition
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
®
Power MOSFET
(3) G
Typical
- 5.3
- 4.2
- 1.7
5 s
2.0
1.3
55
90
30
P-Channel MOSFET
- 55 to 150
(1, 2, 5, 6) D
± 20
- 30
- 20
(4) S
Steady State
Maximum
- 0.95
- 4.0
- 3.2
1.14
0.73
62.5
110
36
Vishay Siliconix
Si3481DV
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI3481DV-T1-E3

SI3481DV-T1-E3 Summary of contents

Page 1

... 4 TSOP 2.85 mm Ordering Information: Si3481DV -T1-E3 (Lead (Pb)-free) Si3481DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si3481DV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Gate Charge 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72105 S09-2276-Rev. D, 02-Nov- °C J 0.8 1.0 1.2 1.4 Si3481DV Vishay Siliconix 1200 900 C iss 600 C oss 300 C rss Drain-to-Source Voltage (V) DS Capacitance 1 5 1.4 1.2 1 ...

Page 4

... Si3481DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0 250 µA D 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 100 125 150 100 I Limited DM Limited DS(on D(on) Limited ° ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72105. Document Number: 72105 S09-2276-Rev. D, 02-Nov- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si3481DV Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords