IRF7379 International Rectifier, IRF7379 Datasheet - Page 6

MOSFET N+P 30V 4.3A 8-SOIC

IRF7379

Manufacturer Part Number
IRF7379
Description
MOSFET N+P 30V 4.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7379

Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
45 mOhm @ 5.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.8A, 4.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
520pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7379

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IRF7379
6
1 0 0
100
1 0
10
Fig 13. Typical Transfer Characteristics
1
1
Fig 11. Typical Output Characteristics
0.1
4
TOP
BOTTOM - 4.5V
-V
-V
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
5
VGS
D S
G S
, D rain-to-S ourc e V oltage (V )
, G a te -to -S o u rc e V o lta g e (V )
1
6
T = 2 5 °C
J
7
2 0 µ s P U LS E W ID TH
T = 2 5°C
V
2 0 µ s P U L S E W ID T H
-4 .5 V
J
D S
T = 1 5 0 °C
1 0
J
= -1 5 V
8
9
1 0 0
10
A
P-Channel
A
100
0.1
10
100
1
10
Fig 12. Typical Output Characteristics
0.0
Fig 14. Typical Source-Drain Diode
1
0.1
TOP
BOTTOM - 4.5V
-V
-V
0.3
S D
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
VGS
D S
, S o u rc e -to-D rain V o ltag e (V )
Forward Voltage
, D rain-to-S ource V oltage (V)
T = 15 0 °C
J
1
0.6
0.9
T = 2 5 °C
20 µ s P U LS E W ID TH
T = 1 50 °C
-4 .5V
J
J
10
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1.2
V
G S
= 0 V
100
1.5
A
A

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