IRF7342 International Rectifier, IRF7342 Datasheet - Page 3

• Manufacturer Part Number: IRF7342
• Description: MOSFET 2P-CH 55V 3.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7342

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 690pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7342

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100
0.1
10
Fig 3. Typical Transfer Characteristics
1
100
Fig 1. Typical Output Characteristics
0.1
10
1
TOP
BOTTOM
3
-V
DS
VGS
-15V
-12V
-10V
-8.0V
-6.0V
-4.0V
-3.5V
-3.0V
-4.5V
-V
GS
, Drain-to-Source Voltage (V)
4
, Gate-to-Source Voltage (V)
T = 25 C
1
J
°
-3.0V
5
20µs PULSE WIDTH
T = 25 C
J
V
20µs PULSE WIDTH
DS
10
= -25V
°
T = 150 C
6
J
°
100
7
100
Fig 2. Typical Output Characteristics
0.1
100
10
0.1
Fig 4. Typical Source-Drain Diode
10
1
1
0.2
0.1
TOP
BOTTOM
-V
-V
T = 150 C
0.4
J
SD
DS
Forward Voltage
VGS
-15V
-12V
-10V
-8.0V
-6.0V
-4.0V
-3.5V
-3.0V
-4.5V
,Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
0.6
°
1
0.8
-3.0V
IRF7342
20µs PULSE WIDTH
T = 150 C
T = 25 C
J
1.0
J
10
V
°
°
GS
1.2
= 0 V
1.4
100
3