IRF7304TR International Rectifier, IRF7304TR Datasheet
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IRF7304TR
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IRF7304TR Summary of contents
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... Dynamic dv/dt Rating Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications ...
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IRF7304 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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VGS TOP - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1. .5V 2 0µ LSE W IDTH ° ...
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IRF7304 0V iss oss ...
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T , Case Temperature C Fig 9. Maximum Drain Current Vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 ...
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IRF7304 Charge Fig 12a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. -3mA Current Sampling ...
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Peak Diode Recovery dv/dt Test Circuit + D.U Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery ...
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IRF7304 Package Outline SO8 Outline 0.25 (.010 0.25 ...
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Tape & Reel Information SO8 Dimensions are shown in millimeters (inches ...