SIF912EDZ-T1-E3 Vishay, SIF912EDZ-T1-E3 Datasheet

no-image

SIF912EDZ-T1-E3

Manufacturer Part Number
SIF912EDZ-T1-E3
Description
MOSFET N-CH 30V 2X5 6-POWERPAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SIF912EDZ-T1-E3

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
19 mOhm @ 7.4A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7.4A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 4.5V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 2x5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SIF912EDZ-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIF912EDZ-T1-E3
Manufacturer:
VISHAY
Quantity:
10 122
Part Number:
SIF912EDZ-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72952
S-82350-Rev. D, 22-Sep-08
Ordering Information: SiF912EDZ-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (V
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
2
S
V
2
G
DS
6
2
30
5
(V)
4
PowerPAK
0.0195 at V
0.019 at V
0.022 at V
0.027 at V
Bi-Directional N-Channel 30-V (D-S) MOSFET
GS
®
R
2 x 5
= 8 V, 10 µs)
DS(on)
J
a
= 150 °C)
a
GS
GS
GS
GS
Marking Code
XYZ: Lot Traceability and Date Code
MC: Part # Code
(Ω)
= 4.5 V
= 3.1 V
= 2.5 V
MCXYZ
= 4.0 V
a
1
2
S
3
1
a
S
1
G
1
A
I
= 25 °C, unless otherwise noted
D
10.7
10.5
9.9
9.0
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• ESD Protected: 3000 V
• Battery Protection Circuitry
• 1-Cell Li-Ion Battery Pack
G
Symbol
Symbol
1
T
R
R
J
- LiB/LiP
- Lithium-Polymer
V
V
I
P
, T
I
DM
thJA
thJC
I
DS
GS
D
S
D
stg
2.6 kΩ
®
Power MOSFET: 2.5 V Rated
Typical
10 s
10.7
7.7
2.9
3.5
1.8
4.5
30
61
- 55 to 150
D
S
1
1
± 12
30
80
Steady State
Maximum
G
2
0.86
7.4
5.3
1.3
1.6
5.6
36
76
Vishay Siliconix
SiF912EDZ
2.6 kΩ
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
D
S
2
2
1

Related parts for SIF912EDZ-T1-E3

SIF912EDZ-T1-E3 Summary of contents

Page 1

... Marking Code MCXYZ 2 MC: Part # Code XYZ: Lot Traceability and Date Code Ordering Information: SiF912EDZ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current ( µs) GS Continuous Diode Current (Diode Conduction) ...

Page 2

... SiF912EDZ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... On-Resistance vs. Drain Current 1.4 1.2 1.0 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature Document Number: 72952 S-82350-Rev. D, 22-Sep- 100 125 150 SiF912EDZ Vishay Siliconix 125 ° ° °C 0 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 7 Total Gate Charge (nC) ...

Page 4

... SiF912EDZ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.06 0. 0.04 I 0.03 0.02 0.01 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 0.01 0.1 1 Time (s) Single Pulse Power, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 = 7.4 A ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72952. Document Number: 72952 S-82350-Rev. D, 22-Sep- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot SiF912EDZ Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

Related keywords