SIB911DK-T1-E3 Vishay, SIB911DK-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SIB911DK-T1-E3
• Description: MOSFET P-CH 20V PWRPAK SC75-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIB911DK-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 295 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 8V
• Input Capacitance (ciss) @ Vds: 115pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK SC-75-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SIB911DK-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74475
S-80515-Rev. B, 10-Mar-08
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
D
T
C
is based on T
Current Derating*
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
New Product
150
4
3
2
1
0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
100
SiB911DK
www.vishay.com
125
150
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