SI5517DU-T1-E3 Vishay, SI5517DU-T1-E3 Datasheet
SI5517DU-T1-E3
Specifications of SI5517DU-T1-E3
Related parts for SI5517DU-T1-E3
SI5517DU-T1-E3 Summary of contents
Page 1
... Bottom View Ordering Information: Si5517DU-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Source-Drain Current Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) ...
Page 2
... Si5517DU Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...
Page 3
... D GEN g P-Channel t d(off) = 2.7 Ω ≅ GEN ° 1 1 N-Channel 1.2 A, dI/dt = 100 A/µ ° P-Channel dI/dt = 100 A/µ ° Si5517DU Vishay Siliconix a Min. Typ. Max N-Ch 65 100 Ω Ω N-Ch 6.9 P- ...
Page 4
... Si5517DU Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.5 V thru 2 0.0 0.5 1.0 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 4 Total Gate Charge (nC) ...
Page 5
... Limited by R DS(on) I limited D(on 0 °C A Single Pulse BVDSS limited 0.01 0 Drain-to-Source Voltage (V) DS > minimum V at which Safe Operating Area, Junction-to-Ambient Si5517DU Vishay Siliconix 0.08 0.07 0.06 125 °C 0.05 25 °C 0.04 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 0.01 0.1 ...
Page 6
... Si5517DU Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Package Limited Case Temperature (°C) C Current Derating* * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
Page 7
... Single Pulse 0. Document Number: 73529 S-81449-Rev. B, 23-Jun- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si5517DU Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA ( ...
Page 8
... Si5517DU Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 3 0.0 0.5 1.0 1 Drain-to-Source Voltage (V) DS Output Characteristics 0. 1 0.25 0.20 0.15 0.10 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 4 Total Gate Charge (nC) g Gate Charge www.vishay.com 8 2 ...
Page 9
... IDM limited * Limited by R DS(on limited D(on °C A BVDSS limited Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS > minimum V at which Safe Operating Area, Junction-to-Case Si5517DU Vishay Siliconix 0.20 0.16 0.12 0. ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 0.01 0 Time (s) ...
Page 10
... Si5517DU Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 8 Package Limited Case Temperature (°C) C Current Derating* * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
Page 11
... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73529. Document Number: 73529 S-81449-Rev. B, 23-Jun- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si5517DU Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA (t) 3 ...
Page 12
... BSC 0.20 0. 0.35 0.40 Package Information Vishay Siliconix A 1 DETAIL Z INCHES MIN. NOM. MAX. 0.028 0.030 0.033 0 - 0.002 0.010 0.012 0.014 0.006 0.008 0.010 0.115 0.118 0.121 ...
Page 13
... Package Information Vishay Siliconix ® ® PowerPAK ChipFET DUAL PAD D D1 (8) D1 (7) D2 (6) SI (1) GI ( (1) GI ( ( Backside view of dual pad DIM. MIN 0.25 C 0.15 D 2. 1. 0.15 K 0. 0.30 ECN: C10-0618-Rev. C, 19-Jul-09 DWG: 5940 www ...
Page 14
... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK 0.350 (0.014) 0.225 (0.009) Return to Index www.vishay.com 10 ® ® ChipFET Dual 2.700 (0.106) 0.300 0.650 (0.012) (0.026) 0.350 (0.014) 0.300 0.650 (0.012) (0.026) 1.175 1.525 (0.060) (0.046) Recommended Minimum Pads Dimensions in mm/(Inches) ...
Page 15
... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...