ZXMD65N02N8TA Diodes Zetex, ZXMD65N02N8TA Datasheet - Page 2

MOSFET N-CHAN DUAL 20V 8-SOIC

ZXMD65N02N8TA

Manufacturer Part Number
ZXMD65N02N8TA
Description
MOSFET N-CHAN DUAL 20V 8-SOIC
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMD65N02N8TA

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
25 mOhm @ 6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6.6A
Vgs(th) (max) @ Id
700mV @ 250µA
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Gate Charge (qg) @ Vgs
-
Other names
ZXMD65N02N8TR
ABSOLUTE MAXIMUM RATINGS.
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ZXMD65N02N8
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current (V
Pulsed Drain Current (c)(d)
Continuous Source Current (Body Diode)(b)(d)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
PARAMETER
Junction to Ambient (a)(d)
Junction to Ambient (b)(d)
Junction to Ambient (a)(e)
Pulsed Source Current (Body Diode)(c)(d)
A
A
A
=25°C (a)(d)
=25°C (a)(e)
=25°C (b)(d)
(V
GS
GS
=4.5V; T
=4.5V; T
A
A
=70°C)(b)(d)
=25°C)(b)(d)
SYMBOL
R
R
R
SYMBOL
V
V
I
I
I
I
P
P
P
JA
JA
JA
D
DM
S
SM
D
D
D
DSS
GS
DRAFT ISSUE A - AUGUST 2000
VALUE
62.5
LIMIT
-
-
6.6
5.3
2.5
2.0
20
26
26
16
12
-
-
-
-
ADVANCED INFORMATION
mW/°C
mW/°C
mW/°C
UNIT
°C/W
°C/W
°C/W
UNIT
W
W
W
A
A
A
A
V
V

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