ZXMD65P03N8TA Diodes Zetex, ZXMD65P03N8TA Datasheet - Page 2

• Manufacturer Part Number: ZXMD65P03N8TA
• Description: MOSFET 2P-CH 30V 4.8MA 8-SOIC
• Manufacturer: Diodes Zetex

Specifications of ZXMD65P03N8TA

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 55 mOhm @ 4.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 930pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: ZXMD65P03N8TR

THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum
junction temperature.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ZXMD65P03N8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current V
Pulsed Drain Current (c)(d)
Continuous Source Current (Body Diode)(b)(d)
Pulsed Source Current (Body Diode)(c)(d)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
PARAMETER
Junction to Ambient (a)(d)
Junction to Ambient (a)(e)
Junction to Ambient (b)(d)
A
A
A
=25°C (a)(d)
=25°C (a)(e)
=25°C (b)(d)
V
V
GS
GS
GS
=-10V; T
=-10V; T
=-10V; T
A
A
A
=70°C (b)(d)
=25°C (a)(d)
=25°C (b)(d)
SYMBOL
R
R
R
JA
JA
JA
SYMBOL
V
V
I
I
I
I
P
P
P
D
DM
S
SM
D
D
D
DSS
GS
PROVISIONAL ISSUE A - MAY 2001
VALUE
71.4
62.5
100
LIMIT
1.25
1.75
-4.8
-3.8
-3.8
-3.0
-30
-18
-18
2.0
10
14
16
20
mW/°C
mW/°C
mW/°C
UNIT
°C/W
°C/W
°C/W
UNIT
W
W
W
V
V
A
A
A
A