MMVL809T1 ON Semiconductor, MMVL809T1 Datasheet - Page 2

• Manufacturer Part Number: MMVL809T1
• Description: Varactor Diodes 20V 4.5pF
• Manufacturer: ON Semiconductor

Specifications of MMVL809T1

• Capacitance: 4.5 pF
• Reverse Voltage: 20 V
• Termination Style: SMD/SMT
• Applications Frequency Range: UHF
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Minimum Tuning Ratio: 1.8
• Mounting Style: SMD/SMT
• Tuning Ratio Test Condition: 2 / 8
• Package / Case: SOD-323-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2. C
ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage
Reverse Voltage Leakage Current
MMVL809T1
1000
800
600
400
(I
(V
R
10
R
9
8
7
6
5
4
3
2
1
0
0.5
is the ratio of C
R
0
= 10 mAdc)
= 15 Vdc)
1
V
Device
f = 1.0 MHz
R
= 3.0 Vdc
0.2
2
Figure 1. Diode Capacitance
Figure 3. Series Resistance
V
t
R
measured at 2.0 Vdc divided by C
3
, REVERSE VOLTAGE (VOLTS)
0.4
4
f, FREQUENCY (GHz)
Characteristics
5
0.6
Min
4.5
8
(T
A
0.8
10
= 25°C unless otherwise noted)
V
C
R
TYPICAL CHARACTERISTICS
t
, Diode Capacitance
= 2.0 Vdc, f = 1.0 MHz
15
1.0
t
Typ
http://onsemi.com
5.3
pF
measured at 8.0 Vdc.
MMVL809T1
1.2
2
1000
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
Max
100
6.1
10
−75
0.1
V
−50
f = 1.0 MHz
R
Symbol
Q, Figure of Merit
V
= 3.0 Vdc
(BR)R
I
V
f = 500 MHz
R
R
Figure 4. Diode Capacitance
−25
= 3.0 Vdc
T
Figure 2. Figure of Merit
Typ
A
75
, AMBIENT TEMPERATURE (°C)
f, FREQUENCY (GHz)
0
Min
20
−
+25
1.0
Typ
C
−
−
R
Min
1.8
+50
, Capacitance Ratio
C
f = 1.0 MHz
2
V
T
/C
A
R
= 25°C
8
= 3 Vdc
+75
Max
50
(Note 2)
−
+100
Max
2.6
nAdc
Unit
Vdc
+125
10