AO4611 Alpha & Omega Semiconductor Inc, AO4611 Datasheet - Page 5

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AO4611

Manufacturer Part Number
AO4611
Description
MOSFET P-CH 60V 6.3A 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO4611

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
25 mOhm @ 6.3A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
6.3A, 4.9A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
58nC @ 10V
Input Capacitance (ciss) @ Vds
2300pF @ 30V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1203-2

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AO4611
Alpha & Omega Semiconductor, Ltd.
P-Channel Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
I
I
V
I
R
g
V
I
DYNAMIC PARAMETERS
C
C
C
R
SWITCHING PARAMETERS
Q
Q
Q
Q
t
t
t
t
t
Q
A: The value of R
A: The value of R
value in anyven application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
rating.
B: Repetitive rating, pulse width limited by junction temperature.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
C. The R
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 00 µs pulses, duty cycle 0.5% max.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating. Rev4: August 2005
SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
DSS
GSS
D(ON)
S
D(on)
r
D(off)
f
rr
FS
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
g
gs
gd
rr
(10V)
(4.5V)
DSS
θJA
θJA
is the sum of the thermal impedence from junction to lead R
is the sum of the thermal impedence from junction to lead R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
θJA
θJA
is measured with the device mounted on 1in
is measured with the device mounted on 1in
Parameter
J
=25°C unless otherwise noted)
2
2
FR-4 board with 2oz. Copper, in a still air environment with T
FR-4 board with 2oz. Copper, in a still air environment with T
Conditions
I
V
V
V
V
V
V
V
I
V
V
V
V
R
I
D
S
F
F
2
2
Rev4: August 2005
DS
DS
DS
GS
GS
GS
DS
=-1A,V
GS
GS
GS
GS
=-4.9A, dI/dt=100A/µs
=-4.9A, dI/dt=100A/µs
=-250µA, V
GEN
FR-4 board with 2oz. Copper, in a still air environment with T
FR-4 board with 2oz. Copper, in a still air environment with T
=-48V, V
=0V, V
=V
=-10V, V
=-10V, I
=-4.5V, I
=-5V, I
=0V, V
=0V, V
=-10V, V
=-10V, V
=3Ω
GS
θJL
θJL
GS
and lead to ambient.
and lead to ambient.
I
D
D
GS
DS
DS
=0V
=-250µA
=-4.9A
D
D
GS
DS
DS
DS
=±20V
=-4.9A
=-30V, f=1MHz
=0V, f=1MHz
GS
=-4.4A
=0V
=-5V
=-30V, I
=-30V, R
=0V
D
T
=-4.9A
L
T
J
=6.2Ω,
=125°C
J
=55°C
Min
-60
-30
-1.5
-0.73
2417
17.8
45.2
22.8
12.7
Typ
179
120
1.9
5.8
9.6
9.8
6.1
-1.9
34
58
42
44
32
42
A
A
=25°C. The
=25°C. The
A
A
=25°C. The
=25°C. The
±100
2900
Max
2.3
42
72
52
55
28
42
-1
-5
-1
-3
-3
Units
mΩ
mΩ
µA
nA
pF
pF
pF
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
V
A
S
V
A
V

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