UPA1793G-E2-AT Renesas Electronics America, UPA1793G-E2-AT Datasheet - Page 9

• Manufacturer Part Number: UPA1793G-E2-AT
• Description: MOSFET N/P-CH 20V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA1793G-E2-AT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 69 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 3.1nC @ 4V
• Input Capacitance (ciss) @ Vds: 160pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

A) N-Channel
150
100
1000
50
1000
100
0
100
10
10
-50
1
0.1
0.1
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. CHANNEL TEMPERATURE
V
f = 1 MHz
GS
T
V
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
ch
F
= 0 V
GS
V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
- Diode Forward Current - A
0
- Channel Temperature - C
DS
= 2.5 V
- Drain to Source Voltage - V
1
1
50
4.5 V
4.0 V
di/dt = 50 A/ s
V
GS
10
10
100
= 0 V
Pulsed
C
C
C
oss
rss
iss
150
DataSheet G16059EJ1V0DS
100
100
0.01
100
0.1
1000
10
100
1
20
16
12
10
8
4
0
1
DYNAMIC INPUT/OUTPUT CHARACTERITICS
0
0.1
0
FORWARD VOLTAGE
SOURCE TO DRAIN DIODE
V
SWITCHING CHARACTERISTICS
t
f
F(S-D)
t
d(off)
t
V
d(on)
V
- Source to Drain Voltage - V
1
Q
GS
I
D
DD
G
- Drain Current - A
= 4.5 V
- Gate Charge - nC
= 16 V
1
0.5
t
10 V
r
4 V
2
V
DS
0 V
V
10
GS
V
V
R
DD
GS
G
3
I
D
= 10
Pulsed
= 10 V
= 4 V
= 3 A
1
PA1793
100
4
5
4
3
2
1
0
7