UPA1793G-E1-AT Renesas Electronics America, UPA1793G-E1-AT Datasheet - Page 7
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UPA1793G-E1-AT
Manufacturer Part Number
UPA1793G-E1-AT
Description
MOSFET N/P-CH 20V 8-SOIC
Manufacturer
Renesas Electronics America
Datasheet
1.UPA1793G-E1-AT.pdf
(14 pages)
Specifications of UPA1793G-E1-AT
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
69 mOhm @ 1.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
1.5V @ 1mA
Gate Charge (qg) @ Vgs
3.1nC @ 4V
Input Capacitance (ciss) @ Vds
160pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TYPICAL CHARACTERISTICS (T
A) N-Channel
100
0.01
100
80
60
40
20
0.1
10
0
1
0.1
0
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
Single pulse
A
R
(at V
= 25 C
25
DS(on)
V
T
DS
GS
A
DC
limited
- Ambient Temperature - C
I
- Drain to Source Voltage - V
= 4.5 V)
D(pulse)
I
50
D(DC)
1000
0.01
Power dissipation
limited
100
0.1
Mounted on ceramic substrate
of 5500 mm
1
10
100
1
75
Mounted on ceramic substrate of
5500 mm
Single pulse, 1 unit, T
100
2
x 2.2 mm , 1 unit
1 m
10
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
2
A
125
PW = 100 s
x 2.2 mm
= 25°C)
1 m s
10 m s
100 m s
150
10 m
A
DataSheet G16059EJ1V0DS
= 25 C
175
100
PW - Pulse Width - s
100 m
1
2.8
2.4
1.6
1.2
0.8
0.4
2
0
R
0
th(ch-A)
10
25
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
= 73.5 C/W
1 unit
T
2 units
A
Mounted on ceramic substrate of
5500 mm
- Ambient Temperature - C
100
50
75
2
x 2.2 mm
1000
100
125
150
PA1793
175
5