AOD606 Alpha & Omega Semiconductor Inc, AOD606 Datasheet - Page 9

• Manufacturer Part Number: AOD606
• Description: MOSFET N/P-CH COMPL 40V TO252-4
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AOD606

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 33 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 404pF @ 20V
• Power - Max: 20W, 30W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (4 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1118-2

AOD606
Alpha & Omega Semiconductor, Ltd.
P-Channel MOSFET Electrical Characteristics (T
0.001
100
10
0.000001
0.01
90
80
70
60
50
40
30
20
10
8
6
4
2
0
0.1
0
10
0.00001
0
1
Figure 12: Single Pulse Avalanche capability
T
T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
A
A
25
=25°C
Figure 14: Current De-rating (Note B)
=150°C
Time in avalanche, t
50
0.0001
T
75
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
0.00001
CASE
Single Pulse
(°C)
100
0.001
I
t
D
A
=-10mA, V
A
125
(s)
BV
L
150
0.01
I
V
D=T
T
R
GS
D
J,PK
DD
JA
0.0001
=0V
=25°C/W
on
=T
175
/T
J
Pulse Width (s)
=25° C unless otherwise noted)
A
+P
DM
0.1
.Z
JA
60
50
40
30
20
10
.R
60
50
40
30
20
10
0
0
0.001
0
JA
Figure 15: Single Pulse Power Rating Junction-to-
25
1
0.01
Figure 13: Power De-rating (Note B)
P
50
D
0.1
Ambient (Note H)
T
Pulse Width (s)
on
10
75
T
T
CASE
1
(°C)
100
100
10
T
125
A
=25°C
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100
150
1000
1000
175