NTHD3102CT1G ON Semiconductor, NTHD3102CT1G Datasheet - Page 9

• Manufacturer Part Number: NTHD3102CT1G
• Description: MOSFET N/P-CH COMPL 20V CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD3102CT1G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A, 3.1A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 7.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 510pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHD3102CT1G; NTHD3102CT1GOSTR

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specification Brochure, BRD8011/D.
NTHD3102CT1G
0.01
0.1
2
1
10
−4
0.05
0.02
0.2
0.1
Duty Cycle = 0.5
Device
Single Pulse
10
−3
10
TYPICAL PERFORMANCE CURVES
−2
Figure 23. Thermal Response
(T
J
= 25°C unless otherwise noted)
Square Wave Pulse Duration (sec)
http://onsemi.com
NTHD3102C
10
(Pb−Free)
−1
Package
ChipFET
9
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
JM −
10
T
P DM
A
3000 Tape & Reel
= P
Shipping
DM
t 1
Z
qJA
t 2
t 1
t 2
thJA
(t)
†
100
= 90°C/W
600