AO4614A Alpha & Omega Semiconductor Inc, AO4614A Datasheet
AO4614A
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AO4614A Summary of contents
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... AO4614A Complementary Enhancement Mode Field Effect Transistor General Description The AO4614A uses advanced trench technology MOSFETs to provide excellent R and low gate charge. The DS(ON) complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AO4614A is Pb-free (meets ROHS & Sony 259 specifications) ...
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... AO4614A N Channel Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD I Maximum Body-Diode Continuous Current ...
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... AO4614A P-Channel Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD I Maximum Body-Diode Continuous Current ...
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... AO4614A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 30 10V (Volts) DS Figure 1: On-Region Characteristics =4. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd =3. 1.8 1.6 1.4 1.2 V =10V 1.0E+01 I =6A D 1.0E+00 1.0E-01 125° ...
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... AO4614A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 V =20V (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 10.0 10ms 1s 1.0 10s T =150°C J(Max =25°C A 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA R =62.5°C/W θJA 1 0.1 ...
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... AO4614A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 -5V -10V 25 - (Volts) DS Figure 1: On-Region Characteristics 60 V =-4. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 160 140 120 125°C 100 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 25 -4. ...
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... AO4614A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 V =-20V (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C, T =25°C J(Max DS(ON) 10.0 limited 0.1s 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA R =62.5°C/W θ ...