NTLJD3115PT1G ON Semiconductor, NTLJD3115PT1G Datasheet - Page 4

• Manufacturer Part Number: NTLJD3115PT1G
• Description: MOSFET P-CHAN DUAL 20V 6-WDFN
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTLJD3115PT1G

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 6.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 531pF @ 10V
• Power - Max: 710mW
• Mounting Type: Surface Mount
• Package / Case: 6-VDFN Exposed Pad
• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Continuous Drain Current: 3.3A
• Power Dissipation: 1.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: WDFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTLJD3115PT1G; NTLJD3115PT1GOSTR

4.5
3.5
2.5
1.5
0.5
0.09
0.08
0.07
0.06
0.05
0.04
1.6
1.4
1.2
1.0
0.8
0.6
0.1
5
4
3
2
1
0
−50
0
1.0
Figure 3. On−Resistance versus Drain Current
I
V
V
D
GS
−V
GS
0.5
= −2.2 A
−25
DS
Figure 1. On−Region Characteristics
= −4.5 V
Figure 5. On−Resistance Variation with
= −4.5 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
1
J
, JUNCTION TEMPERATURE (°C)
−I
0
D
1.5
, DRAIN CURRENT (AMPS)
TYPICAL PERFORMANCE CURVES
1.5
V
25
GS
Temperature
T
T
2
T
= −1.9 V to −6 V
J
J
J
= 100°C
= −55°C
= 25°C
50
2.5
75
3
2.0
100
3.5
T
J
= 25°C
125
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−1.3 V
−1.8 V
−1.7 V
−1.6 V
−1.5 V
−1.4 V
−1.2 V
4
4.5
150
2.5
4
10000
1000
0.15
0.05
100
0.1
(T
10
5
4
3
2
1
0
0
J
1
2
0
= 25°C unless otherwise noted)
Figure 4. On−Resistance versus Drain Current
V
Figure 6. Drain−to−Source Leakage Current
T
V
DS
J
−V
GS
−V
= 25°C
4
≥ 10 V
DS
= 0 V
GS
0.5
T
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
J
, GATE−TO−SOURCE VOLTAGE (VOLTS)
= 125°C
T
6
−I
J
2
D
= 25°C
, DRAIN CURRENT (AMPS)
and Gate Voltage
1
8
versus Voltage
V
V
T
T
GS
GS
10
J
J
T
= 150°C
= 100°C
= −2.5 V
= −4.5 V
J
1.5
3
= −55°C
12
14
2
4
16
2.5
18
20
5
3