NTHD3100CT1G ON Semiconductor, NTHD3100CT1G Datasheet - Page 2

• Manufacturer Part Number: NTHD3100CT1G
• Description: MOSFET N/P-CH 20V 2.9A CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD3100CT1G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.9A, 3.2A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 2.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 165pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 6 S, 8 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V @ N Channel or +/- 8 V @ P Channel
• Continuous Drain Current: 2.9 A @ N Channel or 3.2 A @ P Channel
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHD3100CT1GOSTR

2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: pulse width v 250 ms, duty cycle v 2%.
THERMAL RESISTANCE RATINGS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS (Note 3)
ON CHARACTERISTICS (Note 3)
CHARGES AND CAPACITANCES
Junction−to−Ambient − Steady State (Note 2)
Junction−to−Ambient − t ≤ 10 s (Note 2)
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain “Miller” Charge
Parameter
Parameter
(T
J
V
Symbol
Q
V
R
Q
= 25°C unless otherwise noted)
(BR)DSS
C
C
GS(TH)
I
I
C
G(TOT)
Q
Q
DS(on)
g
G(TH)
DSS
GSS
OSS
RSS
FS
ISS
GS
GD
N/P
http://onsemi.com
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
V
V
V
V
V
V
V
V
f = 1 MHz, V
GS
GS
GS
GS
GS
GS
GS
GS
V
V
V
V
2
GS
GS
GS
GS
= 0 V, V
= 0 V, V
= 0 V, V
= 0 V, V
= −4.5 V, V
= −4.5 V, V
= −4.5 V, V
= −4.5 V, V
V
V
V
V
= 4.5 V, V
= 4.5 V, V
= 4.5 V, V
= 4.5 V, V
V
V
V
GS
GS
V
V
GS
DS
GS
DS
DS
V
GS
GS
DS
= V
= 0 V
Test Conditions
= −4.5 V , I
= −10 V , I
= −2.5 V, I
DS
DS
= 0 V, V
= 0 V, V
= 4.5 V , I
= 2.5 V , I
DS
DS
= 10 V, I
GS
DS
= −16 V
= −16 V
= 16 V
= 16 V
DS
DS
DS
DS
= 0 V
DS
DS
DS
DS
= −10 V, I
= −10 V, I
= −10 V, I
= −10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
GS
GS
D
D
D
D
D
D
= 2.9 A
= −2.2 A
= −3.2 A
= ±8.0 V
= −3.2 A
= 2.3 A
= ±12 V
= 2.9 A
I
I
V
V
V
I
D
T
I
D
V
V
V
D
D
D
D
Symbol
T
D
D
DS
DS
DS
D
D
D
D
J
DS
DS
DS
= −250 mA
J
= −250 mA
R
R
= 2.9 A
= 2.9 A
= 2.9 A
= 2.9 A
= 250 mA
= 250 mA
= 125 °C
= −3.2 A
= −3.2 A
= −3.2 A
= −3.2 A
= 25 °C
qJA
qJA
= −10 V
= −10 V
= −10 V
= 10 V
= 10 V
= 10 V
−.45
Min
−20
0.6
20
Max
113
60
Typ
165
680
100
6.0
8.0
2.3
7.4
0.2
0.6
0.4
1.4
0.7
2.5
58
64
77
85
80
25
70
±100
±100
Max
−1.0
−5.0
−1.5
115
110
1.0
5.0
1.2
80
80
°C/W
°C/W
Unit
Unit
mW
mA
nA
nC
pF
V
V
S