NTLJD3119CTBG ON Semiconductor, NTLJD3119CTBG Datasheet

MOSFET N/P-CH 20V 4.6/4.1A 6WDFN

NTLJD3119CTBG

Manufacturer Part Number
NTLJD3119CTBG
Description
MOSFET N/P-CH 20V 4.6/4.1A 6WDFN
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTLJD3119CTBG

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
65 mOhm @ 3.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.6A, 2.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
3.7nC @ 4.5V
Input Capacitance (ciss) @ Vds
271pF @ 10V
Power - Max
710mW
Mounting Type
Surface Mount
Package / Case
6-VDFN Exposed Pad
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.065 Ohm @ 4.5 V @ N Channel
Forward Transconductance Gfs (max / Min)
4.2 S, 3.1 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
3.8 A @ N Channel or 3.3 A @ P Channel
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTLJD3119CTBG
NTLJD3119CTBGOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTLJD3119CTBG
Manufacturer:
ON Semiconductor
Quantity:
2 300
Part Number:
NTLJD3119CTBG
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
NTLJD3119CTBG
0
NTLJD3119C
Power MOSFET
20 V/−20 V, 4.6 A/−4.1 A, mCoolt
Complementary, 2x2 mm, WDFN Package
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
2. Surface Mounted on FR4 Board using the minimum recommended pad size
© Semiconductor Components Industries, LLC, 2009
December, 2009 − Rev. 4
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
N−Channel
Continuous Drain
Current (Note 1)
P−Channel
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
N−Channel
Continuous Drain
Current (Note 2)
P−Channel
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
Operating Junction and Storage Temperature
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Conduction
Phones and Hard Drives
Complementary N−Channel and P−Channel MOSFET
WDFN Package with Exposed Drain Pad for Excellent Thermal
Footprint Same as SC−88 Package
Leading Edge Trench Technology for Low On Resistance
1.8 V Gate Threshold Voltage
Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
This is a Pb−Free Device
Synchronous DC−DC Conversion Circuits
Load/Power Management of Portable Devices like PDA’s, Cellular
Color Display and Camera Flash Regulators
[2 oz] including traces).
of 30 mm
2
, 2 oz Cu.
Parameter
(T
Steady
Steady
Steady
Steady
Steady
Steady
t ≤ 5 s
t ≤ 5 s
t ≤ 5 s
N−Ch
P−Ch
State
State
State
State
State
State
J
= 25°C unless otherwise noted)
T
T
T
T
T
T
T
T
T
T
T
T
t
p
A
A
A
A
A
A
A
A
A
A
A
A
N−Ch
P−Ch
N−Ch
P−Ch
= 10 ms
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
= 85°C
= 25°C
= 85°C
= 25°C
T
Symbol
J
V
V
, T
I
P
P
T
DSS
DM
I
I
I
I
GS
D
D
D
D
D
D
L
STG
−55 to
Value
±8.0
−3.3
−2.4
−4.1
−2.3
−1.6
0.71
−20
−20
150
260
3.8
2.8
4.6
1.5
2.3
2.6
1.9
20
18
1
Unit
°C
°C
W
W
V
V
A
A
A
A
A
†For information on tape and reel specifications,
NTLJD3119CTAG
NTLJD3119CTBG
Pin 1
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
N−Channel
P−Channel
D2
V
(BR)DSS
−20 V
20 V
Device
G1
D2
S1
ORDERING INFORMATION
JM = Specific Device Code
M
G
(Note: Microdot may be in either location)
1
2
3
PIN CONNECTIONS
http://onsemi.com
= Date Code
= Pb−Free Package
D1
100 mW @ −4.5 V
135 mW @ −2.5 V
200 mW @ −1.8 V
120 mW @ 1.8 V
65 mW @ 4.5 V
85 mW @ 2.5 V
CASE 506AN
D2
R
(Top View)
(Pb−Free)
(Pb−Free)
DS(on)
Package
WDFN6
WDFN6
WDFN6
Publication Order Number:
MAX
D1
3000/Tape & Reel
3000/Tape & Reel
NTLJD3119C/D
1
MARKING
DIAGRAM
Shipping
6
5
4
JMMG
I
D1
G2
S2
D
−4.1 A
−2.0 A
−1.6 A
3.8 A
2.0 A
1.7 A
G
MAX

Related parts for NTLJD3119CTBG

NTLJD3119CTBG Summary of contents

Page 1

... −20 NTLJD3119CTAG −55 to °C J STG 150 T 260 °C NTLJD3119CTBG L †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com R MAX I MAX DS(on 4.5 V 3 2.5 V 120 mW @ 1.8 V 1.7 A 100 mW @ − ...

Page 2

THERMAL RESISTANCE RATINGS Parameter SINGLE OPERATION (SELF−HEATED) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – Steady State Min Pad (Note 4) Junction−to−Ambient – t ≤ (Note 3) DUAL OPERATION (EQUALLY HEATED) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage V Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Gate Threshold Temperature V Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES, ...

Page 4

ELECTRICAL CHARACTERISTICS Parameter SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time ...

Page 5

TYPICAL PERFORMANCE CURVES − N−CHANNEL 2 25° 0.5 1 1 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.1 ...

Page 6

TYPICAL PERFORMANCE CURVES − N−CHANNEL 600 500 iss 400 300 200 C rss C oss 100 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE ...

Page 7

TYPICAL PERFORMANCE CURVES − P−CHANNEL −1 − 4.5 4 3.5 3 2.5 2 1 0.5 1 1.5 2 2.5 −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 11. On−Region Characteristics ...

Page 8

TYPICAL PERFORMANCE CURVES − P−CHANNEL 1200 1000 C iss 800 600 400 C rss C 200 oss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE ...

Page 9

TYPICAL PERFORMANCE CURVES 1000 D = 0.5 100 0.2 0.1 10 0.05 0.02 0.01 1 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 (T = 25°C unless otherwise noted (pk DUTY CYCLE 0.001 ...

Page 10

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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