NTHD2102PT1G ON Semiconductor, NTHD2102PT1G Datasheet - Page 3

• Manufacturer Part Number: NTHD2102PT1G
• Description: MOSFET PWR P-CH DUAL 8V CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD2102PT1G

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 3.4A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 2.5V
• Input Capacitance (ciss) @ Vds: 715pF @ 6.4V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.058 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.4 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHD2102PT1GOS; NTHD2102PT1GOS; NTHD2102PT1GOSTR

10000
1000
0.30
0.25
0.20
0.15
0.10
0.05
100
10
10
1
0
8
6
4
2
0
0
0
0
Figure 3. On−Resistance vs. Drain Current and
V
Figure 5. Drain−to−Source Leakage Current
GS
= 0 V
2
Figure 1. On−Region Characteristics
V
1
GS
−V
−2.4 thru −8 V
−V
= −1.8 V
2
DS
DS
3
, Drain−to−Source Voltage (V)
, Drain−to−Source Voltage (V)
−I
2
D
, Drain Current (A)
Gate Voltage
vs. Voltage
4
4
3
TYPICAL ELECTRICAL CHARACTERISTICS
5
4
6
V
V
6
GS
GS
T
T
J
j
125°C
= −2.5 V
= −4.5 V
= 100°C
= 25°C
T
5
7
http://onsemi.com
J
−1.8 V
−1.6 V
−1.4 V
=
−2 V
NTHD2102P
8
8
6
3
1800
1500
1200
900
600
300
1.2
1.1
1.0
0.9
0.8
10
0
8
6
4
2
0
−50
−8
0
−25
V
Figure 4. On−Resistance Variation vs.
−6
GS
0.5
C
C
Figure 2. Transfer Characteristics
rss
= −4.5 V
iss
Figure 6. Capacitance Variation
−V
−V
−4
T
0
DS
GS
25°C
J
, Junction Temperature (°C)
, Drain−to−Source Voltage (V)
, Gate−to−Source Voltage (V)
1.0
T
j
−2
= 100°C
25
Temperature
1.5
50
0
−55°C
75
2
2.0
C
rss
100
4
T
J
2.5
= 25°C
125
6
C
C
oss
iss
3.0
150
8