AO4619 Alpha & Omega Semiconductor Inc, AO4619 Datasheet - Page 3

• Manufacturer Part Number: AO4619
• Description: MOSFET N/P-CH COMPL 30V 8-SOIC
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO4619

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 7.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.4A, 5.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 11.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 820pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1044-2

AO4619
Alpha & Omega Semiconductor, Ltd.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
35
30
25
20
15
10
60
50
40
30
20
10
60
50
40
30
20
10
0
0
0
2
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 3: On-Resistance vs. Drain Current and
10V
Figure 1: On-Region Characteristics
1
5
4
V
GS
Gate Voltage
2
V
=4.5V
V
DS
V
6V
GS
I
GS
D
(Volts)
10
(A)
(Volts)
=10V
6
25° C
I
D
3
=7.4A
125° C
15
V
8
GS
4
=3.5V
4.5V
20
10
5
1.0E+01
1.0E+00
20
16
12
1.6
1.4
1.2
0.8
0.6
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
8
4
0
1
1.5
-50
0.0
-25
Figure 4: On-Resistance vs. Junction
Figure 2: Transfer Characteristics
2
Figure 6: Body-Diode Characteristics
0
0.2
2.5
25
V
Temperature (° C)
125° C
125° C
DS
Temperature
V
=5V
GS
50
0.4
(Volts)
V
V
Id=7.4A
3
SD
GS
75
(Volts)
=10V
25° C
3.5
100 125 150 175
0.6
V
Id=6A
25° C
GS
=4.5V
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4
0.8
4.5
1.0