NTHC5513T1G ON Semiconductor, NTHC5513T1G Datasheet - Page 9

• Manufacturer Part Number: NTHC5513T1G
• Description: MOSFET N/P-CH 20V 2.1A CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHC5513T1G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.9A, 2.2A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 180pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHC5513T1GOS; NTHC5513T1GOS; NTHC5513T1GOSTR

L
S
8
1
7
2
A
G
6
3
5
4
D
B
C
0.05 (0.002)
M
J
PACKAGE DIMENSIONS
http://onsemi.com
CASE 1206A−03
NTHC5513
K
ChipFET
ISSUE E
9
5
4
6
3
7
2
STYLE 2:
PIN 1. SOURCE 1
8
1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM
4. LEADFRAME TO MOLDED BODY OFFSET IN
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE
6. NO MOLD FLASH ALLOWED ON THE TOP AND
7. 1206A−01 AND 1206A−02 OBSOLETE. NEW
Y14.5M, 1982.
PER SIDE.
HORIZONTAL AND VERTICAL SHALL NOT EXCEED
0.08 MM.
BURRS.
BOTTOM LEAD SURFACE.
STANDARD IS 1206A−03.
DIM
A
B
C
D
G
K
M
J
L
S
MILLIMETERS
MIN
2.95
1.55
1.00
0.25
0.10
0.28
1.80
5
0.65 BSC
0.55 BSC
NOM
MAX
3.10
1.70
1.10
0.35
0.20
0.42
2.00
0.116
0.061
0.039
0.010
0.004
0.011
0.072
MIN
0.025 BSC
0.022 BSC
5
INCHES
NOM
0.122
0.067
0.043
0.014
0.008
0.017
MAX
0.080