NTHD4102PT1G ON Semiconductor, NTHD4102PT1G Datasheet - Page 4

• Manufacturer Part Number: NTHD4102PT1G
• Description: MOSFET PWR P-CH DUAL20V CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD4102PT1G

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 8.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 750pF @ 16V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHD4102PT1GOS; NTHD4102PT1GOS; NTHD4102PT1GOSTR

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1000
100
1000
−V
10
500
400
300
200
900
800
700
600
100
1
GS
0
1
Figure 8. Resistive Switching Time Variation
0
V
I
V
D
−V
DD
GS
= −1.0 A
DS
t
t
d(on)
d(off)
= −10 V
= −4.5 V
2
t
t
f
r
C
R
Figure 6. Capacitance Variation
rss
4
G
, GATE RESISTANCE (OHMS)
vs. Gate Resistance
6
TYPICAL PERFORMANCE CURVES
8
10
0.01
10
100
0.1
10
1
0.1
12
Figure 10. Maximum Rated Forward Biased
V
SINGLE PULSE
T
C
GS
−V
= 25°C
= −8 V
14
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
16
R
THERMAL LIMIT
PACKAGE LIMIT
T
J
DS(on)
Safe Operating Area
http://onsemi.com
= 25°C
C
C
18
1
NTHD4102P
iss
oss
100
LIMIT
20
4
5
4
3
2
1
0
0
Figure 7. Gate−to−Source and Drain−to−Source
(T
5
4
3
2
1
0
0.4
J
10
Q1
= 25°C unless otherwise noted)
1
V
T
Figure 9. Diode Forward Voltage vs. Current
GS
J
−V
= 25°C
0.5
SD
Voltage vs. Total Gate Charge
= 0 V
100 ms
10 ms
1 ms
10 ms
dc
Q
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
2
g
, TOTAL GATE CHARGE (nC)
0.6
Q2
3
100
0.7
QT
4
0.8
5
0.9
6
I
T
D
1.0
J
= −2.7 A
= 25°C
7
1.1
8
1.2