NTJD1155LT1G ON Semiconductor, NTJD1155LT1G Datasheet

NTJD1155LT1G

Manufacturer Part Number

NTJD1155LT1G

Description

MOSFET N/P-CH 8V 1.3A SOT-363

Manufacturer

ON Semiconductor

Datasheet

1.NTJD1155LT1G.pdf (5 pages)

Specifications of NTJD1155LT1G

Fet Type

N and P-Channel

Fet Feature

Standard

Rds On (max) @ Id, Vgs

175 mOhm @ 1.2A, 4.5V

Drain To Source Voltage (vdss)

Current - Continuous Drain (id) @ 25° C

1.3A

Vgs(th) (max) @ Id

1V @ 250µA

Power - Max

400mW

Mounting Type

Surface Mount

Package / Case

SC-70-6, SC-88, SOT-363

Configuration

Dual

Transistor Polarity

N and P-Channel

Resistance Drain-source Rds (on)

0.32 Ohm @ P Channel

Drain-source Breakdown Voltage

8 V @ P Channel

Gate-source Breakdown Voltage

8 V @ N Channel

Continuous Drain Current

+/- 1.3 A

Power Dissipation

400 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

NTJD1155LT1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

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Manufacturer:

Quantity:

18 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

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Manufacturer:

Quantity:

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Company:

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Part Number:

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Manufacturer:

ON/安森美

Quantity:

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Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

NTJD1155LT1G

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Download datasheet (111Kb)

NTJD1155L

Power MOSFET

8 V, +1.3 A, High Side Load Switch with

Level−Shift, P−Channel SC−88

package. This device is particularly suited for portable electronic

equipment where low control signals, low battery voltages and high

load currents are needed. The P−Channel device is specifically

designed as a load switch using ON Semiconductor state−of−the−art

trench technology. The N−Channel, with an external resistor (R1),

functions as a level−shift to drive the P−Channel. The N−Channel

MOSFET has internal ESD protection and can be driven by logic

signals as low as 1.5 V. The NTJD1155L operates on supply lines from

1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 inch sq pad size

March, 2007 − Rev. 4

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Input Voltage (V

ON/OFF Voltage (V

Continuous Load Current

(Note 1)

Power Dissipation

(Note 1)

Pulsed Load Current

Operating Junction and Storage Temperature

Source Current (Body Diode)

ESD Rating, MIL−STD−883D HBM

(100 pF, 1.5 kW)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Foot – Steady State (Note 1)

The NTJD1155L integrates a P and N−Channel MOSFET in a single

Extremely Low R

Level Shift MOSFET is ESD Protected

Low Profile, Small Footprint Package

ON/OFF Range 1.5 to 8.0 V

ESD Rating of 3000 V

Pb−Free Package is Available

(Cu area = 1.127 in sq [1 oz] including traces).

and V

Range 1.8 to 8.0 V

ON/OFF.

Characteristic

DSS

Rating

, P−Ch)

DS(on)

, N−Ch)

Steady

State

= 25°C unless otherwise noted)

P−Channel Load Switch MOSFET

= 10 ms

= 25°C

= 85°C

= 25°C

= 85°C

Symbol

ON/OFF

ESD

STG

qJA

qJF

−55 to

Value

±1.3

±0.9

0.40

0.20

±3.9

−0.4

Max

150

260

320

220

8.0

3.0

°C/W

Unit

°C

†For information on tape and reel specifications,

NTJD1155LT1

NTJD1155LT1G

(Note: Microdot may be in either location)

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

(BR)DSS

8.0 V

Device

= Device Code

= Date Code

= Pb−Free Package

ORDERING INFORMATION

SIMPLIFIED SCHEMATIC

http://onsemi.com

PIN ASSIGNMENT

CASE 419B

D1/G2

(SOT−363)

STYLE 30

130 mW @ −4.5 V

170 mW @ −2.5 V

260 mW @ −1.8 V

SC−88

(Pb−Free)

Package

DS(on)

SC−88

Publication Order Number:

TYP

3000/Tape & Reel

2,3

Shipping

MARKING

DIAGRAM

NTJD1155L/D

TB M G

±1.3 A

MAX

†

Related parts for NTJD1155LT1G

NTJD1155LT1G Summary of contents

Page 1

... L Symbol Max Unit Device R 320 °C/W qJA NTJD1155LT1 R 220 qJF NTJD1155LT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com http://onsemi.com R TYP I MAX DS(on) D 130 mW @ − ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Q2 Drain−to−Source Breakdown Voltage Forward Leakage Current Q1 Gate−to−Source Leakage Current Q1 Diode Forward On−Voltage ON CHARACTERISTICS ON/OFF Voltage Q1 Gate Threshold Voltage Input Voltage Q2 Drain−to−Source On Resistance Load Current V IN ON/OFF C ...

Page 3

TYPICAL PERFORMANCE CURVES 0.70 0.65 0.60 0.55 0. 125°C 0.45 J 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0. 0.5 1.0 1.5 I (AMPS) L Figure drop L 0.8 I ...

Page 4

TYPICAL PERFORMANCE CURVES d(off on/off ...

Page 5

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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