UPA573T-T1-A Renesas Electronics America, UPA573T-T1-A Datasheet - Page 5

• Manufacturer Part Number: UPA573T-T1-A
• Description: MOSFET P-CH DUAL 30V SC-70
• Manufacturer: Renesas Electronics America

Specifications of UPA573T-T1-A

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 Ohm @ 10mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 2.3V @ 10µA
• Input Capacitance (ciss) @ Vds: 16pF @ 5V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

TYPICAL CHARACTERISTICS (T
–0.001
–0.01
–100
–0.1
100
–10
200
100
80
60
40
20
–1
50
20
10
5
2
1
0
–1.0
–0.5
V
Pulsed
measurement
V
Pulsed
measurement
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
DS
DS
FORWARD TRANSFER ADMITTANCE
vs. DRAIN CURRENT
–1
20
= –3 V
= –3 V
–1.5
TRANSFER CHARACTERISTICS
V
T
T
GS
A
A
–2
40
= –25 ˚C
- Ambient Temperature - ˚C
- Gate to Source Voltage - V
I
D
–2.0
- Drain Current - mA
60
–5 –10 –20
–2.5
80
T
75 ˚C
25 ˚C
–25 ˚C
A
25 ˚C
75 ˚C
150 ˚C
100 120 140 160
= 150 ˚C
–3.0
–50 –100 –200
A
–3.5
= 25 ˚C)
Data Sheet G11245EJ3V0DS
–4.0
–2.6
–2.2
–1.8
–1.4
–1.0
250
200
150
100
50
30
20
10
0
–50
–2
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE
–10 mA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
30
–3
V
T
T
GS
ch
A
- Ambient Temperature - ˚C
0
- Channel Temperature - ˚C
- Gate to Source Voltage - V
60
–4
90
50
–5
I
D
= –100 mA
120
–6
Pulsed
measurement
μ PA573T
Total power
dissipation
100
V
I
D
DS
150
= –10 A
–7
= –3 V
μ
180
150
–8
3