UPA505T-T2-A Renesas Electronics America, UPA505T-T2-A Datasheet - Page 4

• Manufacturer Part Number: UPA505T-T2-A
• Description: MOSFET N/P-CH 50V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA505T-T2-A

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 Ohm @ 10mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 1.8V @ 1µA
• Input Capacitance (ciss) @ Vds: 16pF @ 5V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

ELECTRICAL CHARACTERISTICS (T
2
Drain Cut-off Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-State Resistance
Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Marking: FA
Note The left and right values in above table represent the N-ch and P-ch characteristics, respectively.
PARAMETER
SYMBOL
I
I
V
|y
R
R
C
C
C
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
GS(off)
DS(on)1
DS(on)2
iss
oss
rss
fs
|
A
= 25 ˚C)
V
V
V
V
V
V
V
V
V
V
R
DS
GS
DS
DS
GS
GS
DS
GS
DD
GS(on)
G
= 10
= 50/–50 V, V
= 20/+ – 16 V, V
= 5.0/–5.0 V, I
= 5.0/–5.0 V, I
= 4/–4 V, I
= 10/–10 V, I
= 5.0/–5.0 V
= 0, f = 1.0 MHz
= 5.0/–5.0 V, I
TEST CONDITIONS
= 5.0/–5.0 V
, R
L
D
= 500
= 10/–10 mA
D
GS
D
D
D
= 10/–10 mA
DS
= 1/–1 A
= 10/–10 mA
= 10/–10 mA
= 0
= 0
0.8
20
MIN.
–
–
–
–
–
–
–
–
–
–
–
–1.5
15
1.4
12
17
10
68
38
19
15
16
TYP.
3
–
–
–
–1.9
100
60
40
10
40
40
80
4
4
1.0
1.8
30
25
MAX.
1.0
–1.0
–2.5
–
–
–
–
–
–
–
–
+ – 10
100
60
UNIT
mS
pF
pF
pF
PA505T
ns
ns
ns
ns
V
A
A