NTJD4152PT1G ON Semiconductor, NTJD4152PT1G Datasheet - Page 2

• Manufacturer Part Number: NTJD4152PT1G
• Description: MOSFET 2P-CH 20V 880MA SOT-363
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of NTJD4152PT1G

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 880mA
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 2.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 155pF @ 20V
• Power - Max: 272mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.26 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.88 A
• Power Dissipation: 272 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 880mA
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 215mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Rohs Compliant: Yes
• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.26Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-88
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTJD4152PT1GOSTR

3. V
4. Surge current waveform per Figure 5.
5. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
ELECTRICAL CHARACTERISTICS
(T
ELECTRICAL CHARACTERISTICS
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NSQA12VAW5T2
*See Application Note AND8308/D for detailed explanations of
Breakdown Voltage (I
Leakage Current (V
Clamping Voltage 1 (I
Maximum Peak Pulse Current (Note 4)
Junction Capacitance − (V
Clamping Voltage − Per IEC61000−4−2
Breakdown Voltage (I
Leakage Current (V
Zener Impedence (I
Clamping Voltage 1 (I
Maximum Peak Pulse Current (Note 4)
Junction Capacitance − (V
Clamping Voltage − Per IEC61000−4−2 (Note 5)
Symbol
A
datasheet parameters.
V
V
P
= 25°C unless otherwise noted)
I
RWM
V
V
I
PP
I
I
C
BR
BR
R
T
F
pk
C
F
is measured at pulse test current I
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
Peak Power Dissipation
Capacitance @ V
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
Breakdown Voltage @ I
Test Current
Forward Current
Forward Voltage @ I
RWM
RWM
T
T
T
= 5 mA)
PP
PP
− (V
= 1 mA) (Note 3)
= 5 mA) (Note 3)
= 1.6 A) (Note 4)
= 0.9 A) (Note 4)
= 5.0 V)
= 9.0 V)
R
R
R
= 0 V, f = 1 MHz)
= 3.0 V, f = 1 MHz)
= 0 V, f = 1 MHz)
R
Characteristic
= 0 and f = 1.0 MHz
Parameter
F
PP
T
(T
T
.
A
= 25°C unless otherwise noted)
RWM
http://onsemi.com
2
Symbol
V
V
V
I
I
V
V
V
V
C
Z
C
I
I
PP
PP
BR
BR
R
R
C
C
C
C
C
Z
J
J
V
BR
V
RWM
11.4
Min
6.4
−
−
−
−
−
−
−
−
−
−
Uni−Directional
I
Figures 1 and 2
Figures 1 and 2
F
I
I
I
I
R
T
PP
12.0
Typ
6.8
6.7
12
V
−
−
−
−
−
−
−
−
F
Max
12.7
0.05
7.1
1.0
1.6
9.5
0.9
13
15
30
23
15
V
Unit
mA
mA
pF
pF
W
V
V
A
V
V
V
A
V