NTZD3155CT5G ON Semiconductor, NTZD3155CT5G Datasheet - Page 7
![MOSFET N/P-CH COMPL 20V SOT-563](/photos/5/30/53073/sot-563-6_463a_sml.jpg)
NTZD3155CT5G
Manufacturer Part Number
NTZD3155CT5G
Description
MOSFET N/P-CH COMPL 20V SOT-563
Manufacturer
ON Semiconductor
Datasheet
1.NTZD3155CT2G.pdf
(8 pages)
Specifications of NTZD3155CT5G
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
550 mOhm @ 540mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
540mA, 430mA
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
2.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
150pF @ 16V
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTZD3155CT5G
Manufacturer:
ON
Quantity:
30 000
250
200
150
100
100
50
10
0
1
0
1
Figure 9. Resistive Switching Time Variation
V
C
C
GS
ISS
OSS
t
t
d(ON)
d(OFF)
= 0 V
t
t
r
f
DRAIN-T O-SOURCE VOLTAGE (V)
P-CHANNEL TYPICAL PERFORMANCE CURVES
Figure 7. Capacitance Variation
5
R
C
vs. Gate Resistance
G
RSS
, GATE RESISTANCE (W)
10
10
V
I
V
D
15
DD
GS
= -0.215 A
T
= -10 V
= -4.5 V
J
= 25°C
http://onsemi.com
NTZD3155C
100
20
7
5
4
3
2
1
0
0
0.6
0.4
0.2
0
Q
0.3
GS
0.2
V
T
Drain-to-Source Voltage vs. Total Charge
Figure 10. Diode Forward Voltage vs. Current
-V
GS
J
= 25°C
0.4
(T
DS
= 0 V
-V
J
0.4
Q
Q
Figure 8. Gate-to-Source and
= 25°C unless otherwise noted)
SD
G
GD
, TOTAL GATE CHARGE (nC)
0.6
, SOURCE-TO-DRAIN VOLTAGE (V)
0.8
0.5
Q
T
1
0.6
1.2
1.4
0.7
I
T
D
J
1.6
= -0.215 A
= 25°C
-V
GS
1.8
0.8
2
10
9
8
7
6
5
4
3
2
1
0
0.9