TPCF8304(TE85L,F) Toshiba, TPCF8304(TE85L,F) Datasheet - Page 6

• Manufacturer Part Number: TPCF8304(TE85L,F)
• Description: MOSFET P-CH DUAL 30V 3.2A 2-3U1B
• Manufacturer: Toshiba

Specifications of TPCF8304(TE85L,F)

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 72 mOhm @ 1.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 1.2V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 10V
• Power - Max: 530mW
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.072 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.2 A
• Power Dissipation: 1.35 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

-100
-0.1
-10
-1
-0.1
* Single pulse
Curves must be derated linearly with
increase in temperature.
I D max (pulsed) *
Ta = 25°C
Drain-source voltage V DS (V)
Safe operating area
1000
100
-1
10
0.001
10 ms *
1
Single pulse
1 ms *
0.01
V DSS
-10
max
0.1
-100
Pulse width t w (s)
r
6
th
– t
1
w
(4)
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
10
100
(2)
(3)
(1)
1000
TPCF8304
2006-11-17