TPCP8402(TE85L,F) Toshiba, TPCP8402(TE85L,F) Datasheet

TPCP8402(TE85L,F)

Manufacturer Part Number

TPCP8402(TE85L,F)

Description

MOSFET N/P-CH 30V 2-3V1G

Manufacturer

Toshiba

Datasheet

1.TPCP8402TE85LFM.pdf (11 pages)

Specifications of TPCP8402(TE85L,F)

Fet Type

N and P-Channel

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

50 mOhm @ 2.1A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

4.2A, 3.4A

Vgs(th) (max) @ Id

2V @ 1mA

Gate Charge (qg) @ Vgs

10nC @ 10V

Input Capacitance (ciss) @ Vds

470pF @ 10V

Power - Max

580mW

Mounting Type

Surface Mount

Package / Case

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TPCP8402(TE85L,F)

Manufacturer:

Toshiba

Quantity:

3 524

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Portable Equipment Applications

Motor Drive Applications

DC-DC Converter Applications

•

Absolute Maximum Ratings

Lead(Pb)-Free

Low drain-source ON resistance : P Channel R

High forward transfer admittance : P Channel |Y

Low leakage current : P Channel I

Enhancement mode

: P Channel V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain

current

Drain power

dissipation

(t = 5 s)

Drain power

dissipation

(t = 5 s)

Single pulse avalanche energy

(Note 4)

Avalanche current

Repetitive avalanche energy

Single-device value at dual operation

Channel temperature

Storage temperature range

Note: For Notes 1 to 6, refer to the next page.

This transistor is an electrostatic-sensitive device. Handle with caution.

N Channel V

(Note 2a)

(Note 2b)

TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Characteristics

Pulse

Single-device operation

Single-device value at

dual operation (Note 3b)

Single-device operation

Single-device value at

dual operation (Note 3b)

= −0.8 to −2.0 V (V

= 1.3 to 2.5 V (V

(Note 2a, 3b, 5)

= 20 kΩ)

N Channel I

(Note 3a)

(Note 1)

N Channel R

DSS

(Ta = 25°C)

Symbol

DSS

= 10 V, I

N Channel |Y

DGR

D (1)

D (2)

D (1)

D (2)

DSS

GSS

stg

TPCP8402

= −10 V, I

= −10 µA (V

= 10 µA (V

−13.6

−3.4

1.48

1.23

0.58

0.36

0.75

−1.7

−30

±20

DS (ON)

= 1mA)

DS (ON)

−55~150

= −1mA)

Rating

| = 6.0 S (typ.)

0.12

| = 7.0 S (typ.)

150

= 30 V)

= 60 mΩ (typ.)

= −30 V)

= 38 mΩ (typ.)

16.8

1.48

1.23

0.58

0.36

2.86

±20

4.2

2.1

Unit

°C

Weight: 0.017 g (typ.)

Circuit Configuration

Marking

JEDEC

JEITA

TOSHIBA

1．Source1

2．Gate1

3．Source2

4．Gate2

0.475

0.33±0.05

0.025

0.65

8402

2.9±0.1

(Note 6)

5．Drain2

6．Drain2

7．Drain1

8．Drain1

0.17±0.02

0.05

2-3V1G

TPCP8402

Lot No.

2006-11-13

―

0.28

1.12

0.28

0.8±0.05

＊

+0.1

+0.13

+0.1

-0.11

-0.12

-0.11

0.05

Unit: mm

Related parts for TPCP8402(TE85L,F)

TPCP8402(TE85L,F) Summary of contents

Page 1

... TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications • Lead(Pb)-Free • Low drain-source ON resistance : P Channel R N Channel R • High forward transfer admittance : P Channel |Y • Low leakage current : P Channel I N Channel I • ...

Page 2

Thermal Characteristics Characteristics Single-device operation Thermal resistance, (Note 3a) channel to ambient ( (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient ( (Note 2b) ...

Page 3

P-ch (Ta = 25°C) Electrical Characteristics Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time ...

Page 4

N-ch Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time ...

Page 5

P-ch I – Common source -3.5 - 25°C -6 Pulse test -3 -0.4 0 -0.2 -0.6 Drain−source voltage – Common source ...

Page 6

P-ch R – (ON) 150 120 -0.8A, -1.5A, -4. -4. -0.8A, -1.5A, -4. -10V 30 Common source Pulse test 0 −80 − ...

Page 7

P-ch 1000 Single pulse 100 10 1 0.001 Safe operating area -100 I D max (Pulse Single pulse Ta = 25°C Curves must be derated linearly V DSS with increase ...

Page 8

N-ch I – 4.5 3.8 3.5 8.0 Common source 6 25°C 4 Pulse test 0.4 0.2 0.6 Drain−source voltage – Common ...

Page 9

N-ch R – (ON) 120 Common source Pulse test 100 4. 10V −80 − Ambient temperature Ta ...

Page 10

N-ch 1000 Single pulse 100 10 1 0.001 0.01 Safe operating area 100 I D max (Pulse Single pulse Ta = 25°C Curves must be derated linearly V DSS with ...

Page 11

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...

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